| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The F5E1 series from On Semiconductor are AlGaAs infrared emitting diodes operating at a peak wavelength of 880nm. These diodes are housed in a hermetically sealed TO-46 metal can package, offering good optical to mechanical alignment and mechanical matching to TO-18 series phototransistors.
With a continuous forward current rating of 100mA and a typical forward voltage of 1.7V, the F5E1 is suitable for various applications requiring infrared illumination. The device has a wide emission angle of ±40° at half power, making it versatile for sensing and signaling tasks. It operates within a temperature range of -65°C to +125°C.
The TO-46 package is designed for through-hole mounting. Absolute maximum ratings include a reverse voltage of 3V and power dissipation of 170mW at 25°C ambient temperature. The diode exhibits a fast response time with typical rise and fall times of 1.5µs.
This component is described as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected, though these compliance statuses are marked as unverified in the database.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak emission wavelength is 880 nm at a forward current of 100 mA.
The typical forward voltage is 1.7 V at a forward current of 100 mA.
The operating temperature range is -65°C to +125°C.
The F5E1 is supplied in a TO-46-2 Metal Can package.