On Semiconductor

<p>The BAT54CTT1G is a dual common cathode Schottky barrier diode array from On Semiconductor designed for high-speed switching applications, circuit protection, and voltage clamping. It features extremely low forward voltage to reduce conduction loss, with a typical forward voltage of 0.35V at 10mA and 0.52V at 100mA. The device is rated for a maximum reverse voltage of 30V and a continuous forward current of 200mA, with a peak forward current capability of 600mA (non-repetitive).</p><p>&nbsp;</p><p>The diode array offers fast switching performance with a maximum reverse recovery time of 5ns, making it suitable for high-frequency circuits. The total capacitance is typically 7.6pF at 1V reverse bias, minimizing signal distortion. The part is housed in a compact SC-75 surface mount package (also known as SOT-416) and is supplied in tape and reel packaging with a standard quantity of 3000 units per reel.</p><p>&nbsp;</p><p>This device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It operates over a junction temperature range of -55°C to 125°C and has a maximum power dissipation of 225mW at 25°C ambient. The thermal resistance from junction to ambient is 555°C/W on a standard FR-4 board with minimum mounting pad. Typical applications include high-speed switching in portable electronics, DC-DC converters, signal clamping, and reverse polarity protection.</p>

<p>The ESD7371XV2T1G is a unidirectional TVS diode from On Semiconductor designed for ESD protection of voltage sensitive components requiring ultra-low capacitance. It features a reverse standoff voltage of 5.3V and a typical capacitance of 0.43 pF at 1 MHz, with a maximum capacitance of 0.7 pF from I/O to GND. The device provides IEC 61000-4-2 ESD protection of ±8 kV contact and air discharge, with an ESD withstand voltage of 20 kV. Leakage current is less than 1 nA, and dynamic resistance is under 1 ohm. Power dissipation is rated at 300 mW at 25°C ambient temperature. The part is housed in a surface mount SOD-523 package and operates over a junction temperature range of -55°C to 150°C. It is RoHS3 compliant, Pb-Free, and Halogen Free. The ESD7371 series is suitable for RF antenna protection, RF switching, PA, and near field communications applications.</p>

<p>The 1N4732A-T50A is a Zener diode from On Semiconductor designed for voltage regulation and reference applications. It provides a nominal Zener voltage of 4.7V with ±5% tolerance and a maximum power dissipation of 1W. The diode features a low impedance of 8Ω at the Zener test current.</p><p>&nbsp;</p><p>This through-hole component comes in a DO-41 (DO-204AL) package, suitable for manual assembly and prototyping. It operates over a wide temperature range from -65°C to 200°C, making it reliable in extreme environments. The reverse leakage current is only 10µA at 1V reverse voltage.</p><p>&nbsp;</p><p>Typical applications include voltage clamping, overvoltage protection, and as a reference element in power supplies. The 1W power rating allows it to handle moderate current levels in low-power circuits.</p>

<p>The BAT54CTT1 is a dual common cathode Schottky barrier diode from ON Semiconductor designed for high speed switching applications. It features a maximum reverse voltage of 30V and a DC forward current rating of 200mA. The device offers extremely low forward voltage, typically 0.35V at 10mA, which reduces conduction loss.</p><p>&nbsp;</p><p>This diode array is suitable for circuit protection, voltage clamping, and general high speed switching. It is housed in a compact SC-75 (SOT-416) surface mount package, making it ideal for space-constrained handheld and portable applications. The device supports a junction temperature range of -55°C to 125°C and is available in Pb-free finish (BAT54CTT1G).</p>