Parts from this manufacturer
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Compare stocked parts across distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | |
|---|---|---|---|
On Semiconductor
|
370,765
|
Price on request
370,765
|
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On Semiconductor
|
370,734
|
Price on request
370,734
|
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On Semiconductor
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370,135
|
Price on request
370,135
|
|
On Semiconductor
<p>The ESD7421N2T5G is an ESD protection diode from On Semiconductor designed to protect voltage sensitive components from electrostatic discharge. It offers excellent clamping capability, low leakage, and fast response time for best-in-class protection. Key electrical specifications include a reverse standoff voltage of 5 V, breakdown voltage of 16.5 V (min) for Pin 1 to GND and 10.5 V to 14 V for Pin 2 to GND at 1 mA, and a clamping voltage of 38.1 V at 16 A peak pulse current (100 ns). Leakage current is typically 100 nA (max 500 nA) at 5 V. The diode has a low capacitance of 0.3 pF at 1 MHz, making it suitable for high-speed data lines. ESD protection meets IEC 61000-4-2 Level 4 with ±12 kV contact and ±15 kV air discharge. Response time is less than 1 ns. Power dissipation is 300 mW on FR-5 board at 25°C. The device operates over a junction temperature range of -55°C to 150°C. It is housed in a surface mount 2-XDFN (1x0.6) (SOD-882) package, with tape and reel packaging (8000 per reel). Typical applications include cellular phones, automotive sensors, infotainment systems, MP3 players, and digital cameras.</p>
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370,048
|
Price on request
370,048
|
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On Semiconductor
<p>The DAN222T1G is a Common Cathode Silicon Epitaxial Planar Dual Diode designed for ultra high speed switching applications. It is housed in the SOT-416/SC-75 package, ideal for low power surface mount applications where board space is at a premium.</p><p> </p><p>Key electrical ratings include a maximum reverse voltage of 80 V, forward current of 100 mA DC (300 mA peak, 2 A surge), and a forward voltage of 1.2 V at 100 mA. The device features a fast reverse recovery time of 4 ns and low typical diode capacitance of 3.5 pF, making it suitable for high-speed switching circuits.</p><p> </p><p>The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It offers a maximum power dissipation of 150 mW and operates over a junction temperature range up to 150°C with storage from -55 to +150°C.</p>
|
370,020
|
Price on request
370,020
|
|
On Semiconductor
|
370,000
|
Price on request
370,000
|
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On Semiconductor
|
370,000
|
Price on request
370,000
|
|
On Semiconductor
|
370,000
|
Price on request
370,000
|
|
On Semiconductor
|
370,000
|
Price on request
370,000
|
|
On Semiconductor
|
369,955
|
Price on request
369,955
|
|
On Semiconductor
<p>The ESD7381MUT5G is a unidirectional ESD protection diode from On Semiconductor, designed to protect voltage-sensitive components from electrostatic discharge and transient voltage events. It offers excellent clamping capability with a maximum clamping voltage of 8.0V at 1A and 10V at 3A, ensuring robust protection for downstream circuitry.</p><p> </p><p>Key electrical characteristics include a reverse working voltage of 3.3V, a minimum breakdown voltage of 5.0V at 1mA, and a maximum reverse leakage current of 50nA at 3.3V. The device features an ultra-low typical junction capacitance of 0.37pF, making it suitable for high-frequency applications such as RF antenna lines and USB 2.0 high-speed interfaces.</p><p> </p><p>The ESD7381MUT5G is housed in a compact 2-X3DFN (0.6x0.3mm) surface-mount package, ideal for space-constrained designs. It provides IEC 61000-4-2 ESD protection of ±20kV for both contact and air discharge. The device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.</p>
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369,912
|
Price on request
369,912
|
|
On Semiconductor
|
369,120
|
Price on request
369,120
|
|
On Semiconductor
|
369,000
|
Price on request
369,000
|
|
On Semiconductor
|
369,000
|
Price on request
369,000
|
|
On Semiconductor
|
368,849
|
Price on request
368,849
|
|
On Semiconductor
|
368,828
|
Price on request
368,828
|
|
On Semiconductor
|
368,796
|
Price on request
368,796
|
|
On Semiconductor
|
368,583
|
Price on request
368,583
|
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On Semiconductor
|
368,000
|
Price on request
368,000
|
|
On Semiconductor
|
367,900
|
Price on request
367,900
|
|
On Semiconductor
|
367,893
|
Price on request
367,893
|
|
On Semiconductor
|
367,600
|
Price on request
367,600
|
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On Semiconductor
|
367,269
|
Price on request
367,269
|
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On Semiconductor
|
366,702
|
Price on request
366,702
|
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On Semiconductor
|
366,412
|
Price on request
366,412
|
|
On Semiconductor
|
366,149
|
Price on request
366,149
|
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On Semiconductor
|
366,110
|
Price on request
366,110
|
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On Semiconductor
|
365,763
|
Price on request
365,763
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On Semiconductor
|
365,213
|
Price on request
365,213
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On Semiconductor
|
365,000
|
Price on request
365,000
|
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On Semiconductor
|
364,718
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Price on request
364,718
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|
On Semiconductor
|
364,259
|
Price on request
364,259
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On Semiconductor
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364,250
|
Price on request
364,250
|
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On Semiconductor
|
364,038
|
Price on request
364,038
|
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On Semiconductor
|
363,713
|
Price on request
363,713
|
|
On Semiconductor
|
363,694
|
Price on request
363,694
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On Semiconductor
|
363,134
|
Price on request
363,134
|
|
On Semiconductor
<p>The BAV70TT1G is a dual switching diode with a common cathode configuration, manufactured by On Semiconductor. It is designed for general-purpose switching applications requiring two diodes in a single surface-mount package.</p><p> </p><p>Key electrical specifications include a maximum reverse voltage of 100V, a continuous forward current of 200mA, and a peak forward surge current of 500mA. The device features a fast reverse recovery time of 6ns (typical test conditions: IF = IR = 10mA, RL = 100Ω), making it suitable for high-speed switching circuits. Forward voltage is specified at multiple current levels: 715mV max at 1mA, 855mV max at 10mA, 1V max at 50mA, and 1.25V max at 150mA. Reverse leakage current is 100nA max at 50V and 1.0µA max at 100V. Typical diode capacitance is 1.5pF at 0V bias.</p><p> </p><p>The device is housed in a SC-75 (SOT-416) surface-mount package and is supplied in tape and reel packaging with a standard quantity of 3000 pieces. Power dissipation is 225mW on a minimum pad FR-4 board and 360mW on a 1x1 inch pad. Operating temperature range is -55°C to 150°C. The BAV70TT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.</p>
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363,013
|
Price on request
363,013
|
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On Semiconductor
|
363,000
|
Price on request
363,000
|
|
On Semiconductor
|
362,919
|
Price on request
362,919
|
|
On Semiconductor
|
362,800
|
Price on request
362,800
|
|
On Semiconductor
|
362,230
|
Price on request
362,230
|
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On Semiconductor
|
362,160
|
Price on request
362,160
|
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On Semiconductor
|
361,848
|
Price on request
361,848
|
|
On Semiconductor
|
361,722
|
Price on request
361,722
|
|
On Semiconductor
|
361,665
|
Price on request
361,665
|
|
On Semiconductor
|
361,611
|
Price on request
361,611
|
|
On Semiconductor
|
361,600
|
Price on request
361,600
|
|
On Semiconductor
|
361,600
|
Price on request
361,600
|
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On Semiconductor
|
361,600
|
Price on request
361,600
|