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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current - Continuous Drain | |
| Mounting Type | |
| On-State Resistance |
The RF1K49093 is a Dual P-Channel LittleFET Power MOSFET manufactured by ON Semiconductor. This component is designed for power management applications, featuring a maximum drain-source voltage of 12V and a continuous drain current of 2.5A. Its on-state resistance is specified at a maximum of 0.130 Ohm.
The MOSFET is housed in an 8-SOIC package and is designed for surface mount applications. This configuration allows for efficient integration into compact electronic designs.
Key electrical characteristics include its ability to handle 2.5A continuously with a low on-resistance, making it suitable for switching and power control functions. The 12V rating provides flexibility for various low-voltage power supply designs.
This component is suitable for applications requiring efficient power switching and control in a surface-mount form factor. Its dual P-channel configuration can be beneficial for specific circuit designs, such as load switching or power distribution.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the RF1K49093 is 12V.
The RF1K49093 has a continuous drain current rating of 2.5A.
The maximum on-resistance for the RF1K49093 is 0.130 Ohm.
The RF1K49093 is available in an 8-SOIC package.
The RF1K49093 features a surface mount type.