On Semiconductor

<p>The BAS21DW5T1G is a dual high voltage switching diode array from onsemi, containing two independent standard switching diodes. It is designed for applications requiring high reverse voltage capability up to 250V and continuous forward current of 200mA. The device offers fast switching with a reverse recovery time of 50ns, making it suitable for high-speed switching circuits.</p><p>&nbsp;</p><p>Electrical characteristics include a maximum forward voltage of 1.25V at 200mA and a reverse leakage current of 100nA at 200V. The diode array can handle peak forward surge currents up to 2A (1/2 cycle, 60Hz). Power dissipation is rated at 385mW when mounted on an FR-5 board. The operating junction temperature range is -55°C to +150°C.</p><p>&nbsp;</p><p>The BAS21DW5T1G is housed in a surface mount SOT-353 package (also known as SC-88A or SC-70-5), which is compact and suitable for automated assembly. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting environmental standards.</p>

<p>The BAT54ALT3G is a Schottky barrier diode array from On Semiconductor, designed for high-speed switching, circuit protection, and voltage clamping. This device features a 1 pair common anode configuration with a maximum reverse voltage of 30V and a DC forward current rating of 200mA. Extremely low forward voltage (0.35V typical at 10mA) reduces conduction loss, making it suitable for portable and battery-powered applications.</p><p>&nbsp;</p><p>Key electrical characteristics include a maximum reverse recovery time of 5.0ns, typical reverse leakage of 0.2µA at 25V, and low total capacitance (7.6pF typical at 1V). The device is housed in a compact SOT-23-3 surface mount package, which is ideal for space-constrained designs. The operating temperature range is -55°C to 150°C.</p><p>&nbsp;</p><p>This part is Pb-free, halogen-free, and RoHS compliant. It is suitable for use in high-speed switching circuits, voltage clamping, and protection in portable electronics, automotive systems (with AEC-Q101 qualified variants available), and general-purpose signal conditioning.</p>

<p>The BZX84C39LT1G is a Zener diode from On Semiconductor designed for voltage regulation in compact surface-mount applications. It features a nominal Zener voltage of 39V with a tolerance of ±5%. The device is rated for 250mW power dissipation on FR-4 or FR-5 boards, as specified in the datasheet.</p><p>&nbsp;</p><p>Electrical characteristics include a typical forward voltage of 900mV at 10mA, a maximum reverse leakage current of 50nA at 27.3V, and a maximum Zener impedance of 130Ω. The diode offers an ESD rating of greater than 16kV (Human Body Model, Class 3). It operates over a junction temperature range of -65°C to 150°C. Thermal resistance is 500°C/W (junction-to-ambient on FR-5) and 300°C/W on an alumina substrate.</p><p>&nbsp;</p><p>The device is packaged in a SOT-23-3 (TO-236) surface-mount package, supplied in tape and reel with 3,000 pieces per reel. It is RoHS compliant and Pb-free, with a UL 94 V-0 flammability rating. The compact package is suitable for high-density PCB assemblies in portable electronics, cellular phones, and other space-constrained designs.</p>