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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-MSOP | 4.5V ~ 18V | |
Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 18V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-SOIC | 9V ~ 12V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | IGBT, SiC MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-TDFN (3x3) | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-TDFN (3x3) | 4V ~ 14V | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-MSOP-EP | 4.5V ~ 18V | |
IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC-EP | 4.5V ~ 35V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC-EP | 4.5V ~ 35V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-SOIC | 9V ~ 18V | |
Monolithic Power Systems
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Independent | 4A, 5.9A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 10ns | 8-QFN (4x4) | 8V ~ 15V | |
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Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
Infineon Technologies
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Independent | 200mA, 350mA | High-Side and Low-Side | N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.2 V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 150ns, 50ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 4A, 4A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | CMOS, TTL | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 22ns, 18ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-MSOP | 4.5V ~ 18V | |
Diodes Incorporated
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 100 V | Inverting | 0.8V, 2.4V | Surface Mount | 6 | 150°C (TJ) | 90ns, 35ns | 28-SO | 10V ~ 20V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC-EP | 4.5V ~ 35V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-SOIC | 9V ~ 18V | |
Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
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Toshiba
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Single | 5mA | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.6V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | - | 10-WSON (3x3) | 5.75V ~ 26V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | - | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 20ns, 16ns | 8-SOIC | 4.15V ~ 13.2V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 1V, 2V | Through Hole | 2 | -55°C ~ 150°C (TJ) | 20ns, 15ns | 8-PDIP | 4.5V ~ 15V | |
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Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 1V, 2V | Through Hole | 2 | -55°C ~ 150°C (TJ) | 20ns, 15ns | 8-PDIP | 4.5V ~ 15V | |
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Diodes Incorporated
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3-Phase | 420mA, 750mA | Half-Bridge | N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.4V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 45ns, 25ns | 20-SO Type TH | 10V ~ 20V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
Monolithic Power Systems
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Independent | 2.6A, 4.5A | Half-Bridge | N-Channel MOSFET | 115 V | - | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 12ns | 10-QFN (4x4) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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ALPHA & OMEGA SEMICONDU CTOR
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3-Phase | 200mA, 350mA | High-Side and Low-Side | IGBT | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 125ns, 50ns | 28-SOP | 10V ~ 20V | |
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ALPHA & OMEGA SEMICONDU CTOR
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3-Phase | 200mA, 350mA | High-Side and Low-Side | IGBT | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 125ns, 50ns | 28-SOP | 13.2V ~ 20V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 8.3V, 12.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 75ns, 35ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Independent | - | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.65V, 1.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 13.5ns | 16-VQFN (3x3) | 4.5V ~ 28V | |
Monolithic Power Systems
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Independent | - | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 9ns | 8-SOICE | 9V ~ 16V | |
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Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 75ns, 25ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Infineon Technologies
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Independent | 290mA, 600mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-PDIP | 10V ~ 20V | |
Allegro MicroSystems
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Independent | - | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | - | 20-TSSOP-EP | 5.5V ~ 50V | |
Monolithic Power Systems
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Synchronous | 800mA, 1A | Half-Bridge | N-Channel MOSFET | - | - | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | 28-QFN (4x4) | 5V ~ 60V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-PDIP | 4.5V ~ 16V | |
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Microchip Technology
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Single | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 16V | |
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Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.7V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 10ns | 8-SOIC | 6V ~ 20V | |
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Monolithic Power Systems
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3-Phase | 800mA, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 6 | -40°C ~ 125°C (TJ) | - | 28-TSSOP-EP | 8.5V ~ 14V | |
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Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.7V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 10ns | 8-SOIC | 6V ~ 20V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 9ns | 8-SOIC-EP | 9V ~ 16V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 9ns | 8-SOIC-EP | 9V ~ 16V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C | 20ns, 20ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Monolithic Power Systems
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3-Phase | 800mA, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 6 | -40°C ~ 125°C (TJ) | - | 28-QFN (4x5) | 8.5V ~ 14V | |
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Monolithic Power Systems
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3-Phase | 800mA, 1A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 0.8V, 2V | Surface Mount | 6 | -40°C ~ 125°C (TJ) | - | 28-QFN (4x5) | 8V ~ 100V | |
Monolithic Power Systems
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 600 V | - | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | - | 16-SOIC | 10V ~ 12V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 2A, 2A | Half-Bridge | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.3V, 1.7V | Surface Mount | 4 | -20°C ~ 125°C (TJ) | 7ns, 7ns | 16-QFN (3x3) | 5V ~ 10V | |
Diodes Incorporated
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Single | 2.5A, 2.5A | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 305ns, 20ns | SM8 | 5V ~ 15V | |
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Infineon Technologies
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Single | 1A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 2V, 2.25V | Surface Mount | 1 | -25°C ~ 125°C (TJ) | 20ns, 10ns | 8-SOIC | 11V ~ 19V | |
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Microchip Technology
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Synchronous | 9A, 9A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 22ns, 22ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Synchronous | 9A, 9A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 22ns, 22ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Synchronous | 9A, 9A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 22ns, 22ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Synchronous | 9A, 9A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 22ns, 22ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Synchronous | 9A, 9A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 22ns, 22ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Synchronous | 9A, 9A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 22ns, 22ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16V | |
Microchip Technology
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-MSOP-EP | 4.5V ~ 18V | |
Infineon Technologies
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Single | 500mA, 500mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 80ns, 80ns | 8-SOIC | 10V ~ 20V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-QFN (3x3) | 9V ~ 18V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 10-QFN (3x3) | 4.5V ~ 18V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 10-QFN (3x3) | 4.5V ~ 18V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-QFN (3x3) | 9V ~ 18V | |
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Monolithic Power Systems
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Independent | 4A, 5.9A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 15V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 10-QFN (3x3) | 9V ~ 18V | |
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Monolithic Power Systems
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Independent | 4A, 4A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 9ns | 8-SOIC | 9V ~ 16V | |
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Infineon Technologies
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 20ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-PDIP | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-PDIP | 4.5V ~ 16V |
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