| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,336 pcs
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2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2132SPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver IC. It offers three independent high and low side referenced output channels, capable of operating up to 600 volts.
Key electrical specifications include a gate drive supply range of 10V to 20V and logic voltage compatibility down to 2.5V. The device features undervoltage lockout for all channels and an over-current shutdown function that turns off all six drivers. Matched propagation delays simplify use at high frequencies.
This gate driver is housed in a 28-SOIC package and is designed for surface mount applications. It operates within a temperature range of -40°C to 150°C (TJ). The package power dissipation is rated at 1.6W for a 28-lead SOIC at 25°C, with a thermal resistance of 78°C/W.
The IR2132SPBF is suitable for driving N-channel power MOSFETs or IGBTs in high-side configurations. Its robust monolithic construction, enabled by proprietary HVIC technology, ensures reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The IR2132SPBF is available in a 28-SOIC surface-mount package.
The junction temperature range is -40°C to +150°C.
The high-side voltage rating is 600V.
It can source 420mA and sink 200mA output current.
Typical propagation delays are 675ns turn-on and 425ns turn-off.
The typical dead time is 0.8µs.