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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 11.5ns, 10ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
Monolithic Power Systems
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Independent | 7A, 8A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.2ns, 5.5ns | 10-QFN (4x4) | 5V ~ 17V | |
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Microchip Technology
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Independent | 3A, 3A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C | 12ns, 12ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Half-Bridge | IGBT | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C | 12ns, 12ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | High-Side or Low-Side | IGBT | - | Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C | 12ns, 12ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
Texas Instruments
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SON (3x3) | 4.5V ~ 8.8V | |
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Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 6V ~ 20V | |
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Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 6V ~ 20V | |
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Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 6V ~ 20V | |
Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 6V ~ 20V | |
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Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 6V ~ 20V | |
Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 11.2V ~ 20V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-QFN (3x3) | 9V ~ 18V | |
Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 100 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 10-QFN (3x3) | 4.5V ~ 18V | |
Monolithic Power Systems
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Independent | 4A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 12ns | 8-SOIC | 4.5V ~ 18V | |
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Monolithic Power Systems
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Independent | 4A, 4A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C | 15ns, 12ns | 8-SOIC | 9V ~ 16V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-QFN (3x3) | 9V ~ 18V | |
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Monolithic Power Systems
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Independent | 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 10-QFN (3x3) | 9V ~ 18V | |
Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
Infineon Technologies
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Independent | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 8-SOIC | 10V ~ 20V | |
Diodes Incorporated
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Independent | 4.5A, 4.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 20ns | 14-SO | 10V ~ 20V | |
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Infineon Technologies
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Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 1V, 2V | Through Hole | 2 | -55°C ~ 150°C (TJ) | 20ns, 15ns | 8-PDIP | 4.5V ~ 15V | |
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Diodes Incorporated
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Synchronous | 1.4A, 1.8A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | 150°C (TJ) | 40ns, 20ns | 14-SO Type TH | 10V ~ 20V | |
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Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 12V ~ 20V | |
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On Semiconductor
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Independent | 2.8A, 4.3A | Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 9ns | 8-SOIC | 4.5V ~ 18V | |
On Semiconductor
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Single | 20mA, 15mA | High-Side or Low-Side | IGBT | - | Inverting | 0.75V, 4.3V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 9.2ns, 7.9ns | 8-SOIC | 20V | |
IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-SOIC | 4.5V ~ 35V | |
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Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
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Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
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Renesas
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1.47V, 1.84V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 10-TDFN (4x4) | 6V ~ 18V | |
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Renesas
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1.47V, 1.84V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 6V ~ 18V | |
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Renesas
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Synchronous | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1.47V, 1.84V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 10-TDFN (4x4) | 6V ~ 18V | |
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Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 75ns, 35ns | 8-SOIC | 10V ~ 20V | |
Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 75ns, 35ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-SOIC | 4.5V ~ 18V | |
Diodes Incorporated
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 75ns, 35ns | 8-SO | 10V ~ 20V | |
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Diodes Incorporated
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 75ns, 35ns | 8-SO | 10V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Infineon Technologies
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
Infineon Technologies
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Synchronous | 180mA, 260mA | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 45ns | 8-SOIC | 10V ~ 15.6V | |
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Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
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Infineon Technologies
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -10°C ~ 125°C (TJ) | 8ns, 8ns | 8-QFN (3x3) | 4.5V ~ 5.5V | |
On Semiconductor
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Single | 10.6A, 11.4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 23ns, 19ns | 8-SOIC | 4.5V ~ 18V | |
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Diodes Incorporated
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Independent | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 13ns | 16-SO | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 14-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Infineon Technologies
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Independent | 290mA, 600mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 14-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
Microchip Technology
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Single | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 9.5ns, 9ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Single | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 9.5ns, 9ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Monolithic Power Systems
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Independent | 7A, 8A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.2ns, 5.5ns | 8-QFN (4x4) | 5V ~ 17V | |
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Microchip Technology
|
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
Monolithic Power Systems
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Independent | 2.6A, 4.5A | Half-Bridge | N-Channel MOSFET | 115 V | - | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 12ns | 10-QFN (4x4) | 4.5V ~ 18V | |
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Monolithic Power Systems
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Independent | 4A, 4A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 12ns | 10-QFN (4x4) | 9V ~ 16V | |
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Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 75ns, 25ns | 8-SOIC | 10V ~ 20V | |
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Tamura
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Independent | - | Half-Bridge | IGBT, SiC MOSFET | - | - | - | Chassis Mount | 2 | -40°C ~ 85°C (TA) | 500ns, 500ns | Module | 5V | |
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Texas Instruments
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SON (3x3) | 6.8V ~ 8.8V | |
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Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 130ns, 50ns | 8-SOIC | 5V ~ 20V | |
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Microchip Technology
|
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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On Semiconductor
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Independent | 5A, 5A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 9ns | 8-SOIC | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
|
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
|
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Independent | 4A, 4A | Low-Side | IGBT, SiC MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
Analog Devices Inc./Maxim Integrated
|
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
|
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
|
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
|
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
|
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
Analog Devices Inc./Maxim Integrated
|
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-TDFN (3x3) | 4V ~ 14V | |
Microchip Technology
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Single | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 9.5ns, 9ns | 8-WDFN (2x2) | 4.5V ~ 18V |
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