| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,524 pcs
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2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Type | |
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The IR2110PBF from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, enabling robust monolithic construction through proprietary HVIC and latch immune CMOS technologies.
This gate driver IC operates with a gate drive supply range of 10 to 20V and a logic supply range of 3.3V to 20V. It is compatible with 3.3V logic inputs and supports a high side voltage of up to 500V. The device provides 2A of current for both high and low side outputs, with rise times of 17ns and 25ns.
Designed for ease of use in high-frequency applications, the IR2110PBF features matched propagation delays. The floating channel can drive an N-channel power MOSFET or IGBT in the high side configuration. It is housed in a 14-DIP package and supports through-hole mounting.
Key electrical characteristics include a logic voltage range of 6V to 9.5V and an operating temperature range of -40°C to 150°C (TJ). The independent channel type and half-bridge driven configuration make it suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.20 | $4.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage is 10V to 20V, and the logic supply voltage is 3.3V to 20V.
The maximum high side voltage is 500V.
The package is 14-DIP (0.300", 7.62mm) through hole.
The operating junction temperature range is -40°C to 150°C.
It has two independent drivers.
Each driver can source and sink 2A peak current.
The propagation delay matching between channels is 10 ns maximum.