IR2213STRPBF The Infineon Technologies IR2213STRPBF is a high and low side gate driver designed for power MOSFET and IGBT applications. It features 1200V isolation and a 16-SOIC package.
Mfr Part #:

IR2213STRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IR2213STRPBF is a high and low side gate driver designed for power MOSFET and IGBT applications. It features 1200V isolation and a 16-SOIC package.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.01

IR2213STRPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

IR2213STRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
High Side Voltage
Input Type
Logic Voltage
Mounting Type
Number of Drivers
Operating Temperature
Rise
Supplier Device Package
Voltage

IR2213STRPBF Description

Short technical summary and product information.

The Infineon Technologies IR2213STRPBF is a high voltage, high speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, with a floating channel designed for bootstrap operation and fully operational to 1200 V.

 

Key electrical specifications include a gate drive supply range of 12 V to 20 V and a separate logic supply range of 3.3 V to 20 V. The device offers an output current of 2 A / 2.5 A and features matched propagation delays for high-frequency applications. It is compatible with standard CMOS or LSTTL outputs down to 3.3 V logic.

 

This driver is housed in a 16-SOIC package and is designed for surface mount applications. Its robust monolithic construction utilizes proprietary HVIC and latch immune CMOS technologies, making it tolerant to negative transient voltage and dV/dt immune. The IR2213STRPBF is suitable for driving N-channel power MOSFETs or IGBTs in high-side configurations.

IR2213STRPBF Quick Information

Product Type: Gate Driver
Canonical Name: Infineon Technologies IR2213STRPBF High and Low Side Driver
Subcategory: Power Management

IR2213STRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IR2213STRPBF Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

IR2213STRPBF Features

  • High and low side driver with 1200 V isolation.
  • Designed for bootstrap operation.
  • Supports N-channel MOSFET and IGBT.
  • 16-SOIC package for surface mounting.
  • Matched propagation delays for high frequency.

IR2213STRPBF Applications

  • Ideal for power MOSFET driving.
  • Suitable for IGBT switching applications.
  • Used in high-frequency power supplies.
  • Enables robust half-bridge configurations.

IR2213STRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum high side floating supply voltage for the IR2213STRPBF?

The maximum high side floating supply voltage is 1225 V.

What is the maximum low side fixed supply voltage?

The maximum low side fixed supply voltage is 25 V.

What is the recommended gate drive supply voltage range?

The recommended gate drive supply voltage range is 12 V to 20 V.

What is the typical output current for the high side and low side?

The typical output current is 1.7 A for the high side and 2 A for the low side.

What is the typical turn-on/off time?

The typical turn-on/off time is 280 ns / 225 ns.

What is the operating temperature range of the IR2213STRPBF?

The operating temperature range is -40°C to 150°C.

What is the package type for the IR2213STRPBF?

The package type is 16-SOIC (0.295", 7.50mm Width).

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