| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2103PBF from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed for half-bridge applications and operates up to 600 volts.
Key electrical specifications include a gate drive supply range of 10V to 20V and output currents of 210mA and 360mA. The device supports logic voltages of 0.8V and 3V, with inverting and non-inverting input types. It offers independent channels for driving N-channel MOSFETs or IGBTs.
This driver IC is housed in an 8-pin DIP package suitable for through-hole mounting. It operates across a wide temperature range of -40°C to 150°C (TJ).
The IR2103PBF is built using proprietary HVIC and latch immune CMOS technologies, ensuring rugged monolithic construction. It is compatible with standard CMOS or LSTTL logic outputs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high-side voltage is 600V.
The gate drive supply voltage range is 10V to 20V.
The operating temperature range is -40°C to 150°C (junction).
The IR2103PBF is available in an 8-PDIP (0.300", 7.62mm) package.
The output current range is 210mA to 360mA.
Typical turn-on delay is 680ns and turn-off delay is 150ns.
Yes, the typical dead time is 520ns.