| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,524 pcs
|
2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Driven Configuration | |
| Duty Cycle | |
| Gate Type | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| Supplier Device Package | |
| Supplier Package |
The 2SD315AI from Power Integrations is a dual SCALE driver core designed for the reliable driving and safe operation of IGBTs and Power MOSFETs. The SCALE acronym stands for Scaleable, Compact, All purpose, Low cost, and Easy to use.
This module is suitable for 1200V and 1700V IGBTs and features a high gate current of ±15A. It provides electrical isolation of 4000VAC and boasts high dv/dt immunity, guaranteed at over 100,000V/µs. The switching frequency can range from DC to over 100kHz, with a duty cycle of 0-100%.
Applications include inverters, motor drive technology, traction, railroad power supplies, converters, and switched-mode power supplies. The 2SD315AI is housed in a 44-DIP Module, 42 Leads package and is designed for through-hole mounting.
Key specifications include a current rating of 18A per channel, rise times of 160ns and 130ns, and an operating temperature range of -40°C to 85°C. The driver configuration is half-bridge, supporting IGBT and N-Channel/P-Channel MOSFET gate types.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SD315AI operates from -40°C to 85°C.
The 2SD315AI provides a nominal gate current of ±15A.
The 2SD315AI provides 4000VAC electrical isolation.
The 2SD315AI supports switching from DC to over 100kHz.
The 2SD315AI is available in a 44-DIP Module with 42 leads.
The 2SD315AI can drive IGBTs, N-Channel MOSFETs, and P-Channel MOSFETs.
The 2SD315AI offers a dv/dt immunity greater than 100,000V/µs.