| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,681 pcs
|
2681 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
| Voltage |
The Renesas ISL2110ABZ-T is an integrated circuit featuring a half-bridge gate driver configuration for N-channel MOSFETs. It is housed in a compact 8-SOIC package suitable for surface mounting.
This device supports a supply voltage range of 8V to 14V and offers independent channels with non-inverting input types. It can deliver peak output currents of 3A and 4A, with rise times as fast as 7.5ns. The operating temperature range is from -40°C to 125°C (TJ).
Key electrical specifications include logic voltages of 3.7V and 7.4V, and a high-side voltage capability of 114V. The ISL2110ABZ-T is designed for applications requiring efficient driving of power MOSFETs in a half-bridge topology.
It is RoHS3 compliant and comes in a Tape & Reel package, making it suitable for automated assembly processes. The 8-SOIC package has a width of 3.90mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8V to 14V.
8-SOIC (0.154", 3.90mm Width).
-40°C to 125°C junction temperature.
3A to 4A.
2 independent channels.
N-Channel MOSFETs.
114V.