| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,810 pcs
|
2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MC33GD3100EKR2 from NXP Semiconductors is an advanced single-channel gate driver IC specifically engineered for IGBT and SiC power devices. It provides robust performance with a peak output current capability of 15A for both source and sink.
This gate driver operates with a supply voltage of 5V and is designed for surface mount applications, utilizing a 32-BSSOP package. It supports IGBT and N-Channel MOSFET gate types and is configured for half-bridge operation.
The device is suitable for a wide range of environmental conditions, with an operating temperature range of -40°C to 125°C (TA). It is supplied in tape and reel packaging for automated assembly processes.
Key features include integrated galvanic isolation, low on-resistance drive transistors, and rail-to-rail gate voltage control. It also incorporates current and temperature sensing for fault minimization and protection, along with an SPI interface for monitoring and programmability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 5V.
The package is a 32-BSSOP (0.295", 7.50mm Width).
The operating temperature range is -40°C to 125°C (TA).
The RoHS status is ROHS3 Compliant.
The peak output current is 15A.
There is 1 driver integrated.
It can control IGBT and N-Channel MOSFET gates.