HIP2100IBZ
Renesas
The Renesas HIP2100IBZ is a half-bridge gate driver IC designed for power management applications. It features independent channels and N-Channel MOSFET gate drive capabilities.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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360 pcs
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360 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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134 pcs
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134 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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| Gate Type | |
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| Voltage |
The HIP2100IB from Intersil is a half-bridge MOSFET driver featuring independent channels for N-channel MOSFETs. This device is designed for applications requiring efficient switching and power control.
Key electrical specifications include an operating voltage range of 9V to 14V, with logic voltages of 4V and 7V. It delivers a current of 2A per channel and supports a high-side voltage of 114V. The driver boasts fast switching characteristics with rise times of 10ns.
Packaged in an 8-SOIC (0.154", 3.90mm Width) format, the HIP2100IB is designed for surface mounting. Its operating temperature range is -55°C to 150°C (TJ), making it suitable for demanding environments. The driver configuration is half-bridge, providing a robust solution for power electronics designs.
| Qty | Low | High |
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| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
9V to 14V.
8-SOIC surface mount.
-55°C to 150°C.
2 independent drivers.
2A per channel.
10ns.