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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 60ns, 60ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 60ns, 60ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 60ns, 60ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 60ns, 60ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
Microchip Technology
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Independent | 2A, 3A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 3V, 8V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 6ns | 8-SOIC | 9V ~ 16V | |
Renesas
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 1.63V, 2.06V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 2ns | 12-DFN (4x4) | 4.5V ~ 14V | |
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Infineon Technologies
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MELEXIS
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Independent | 1.4A, 1.6A | Half-Bridge | N-Channel MOSFET | - | - | - | Surface Mount | 4 | -40°C ~ 175°C (TJ) | 7ns, 7ns | 28-TSSOP-EP | 4.5V ~ 28V | |
Infineon Technologies
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Independent | 290mA, 600mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-PDIP | 10V ~ 20V | |
Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
Microchip Technology
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Single | 12A, 12A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Renesas
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
Microchip Technology
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Independent | 1A, 1A | Full-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 16-SSOP | 5.25V ~ 16V | |
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Infineon Technologies
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 200 V | Inverting | 0.8V, 2.7V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 15ns | 8-PDIP | 10V ~ 20V | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-DFN (2x2) | 4.5V ~ 5.5V | |
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Microchip Technology
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Single | 10A, 10A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 38ns, 33ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 10A, 10A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 38ns, 33ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 2A, 3A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 6ns | 8-SOIC | 9V ~ 16V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 2.4A, 2.4A | Half-Bridge | N-Channel MOSFET | 42 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 8ns | 8-MSOP-EP | 6V ~ 9.5V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 2.4A, 2.4A | Half-Bridge | N-Channel MOSFET | 42 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 8ns | 8-MSOP-EP | 6V ~ 9.5V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 28ns, 32ns | 16-SOIC | 4.5V ~ 18V | |
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Renesas
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Microchip Technology
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-MSOP-EP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 28ns, 32ns | 16-SOIC | 4.5V ~ 18V | |
Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.4V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 9V ~ 14V | |
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Microchip Technology
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 4.5V ~ 18V | |
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Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Inverting, Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-PDIP | 10V ~ 20V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 20-SOIC | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 20-SOIC | 10V ~ 20V | |
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 18ns, 14ns | 12-MSOP-EP | 5V ~ 14V | |
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Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 12V ~ 20V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-SOIC | 4.5V ~ 18V | |
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Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-PDIP | 10V ~ 20V | |
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Monolithic Power Systems
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Independent | 4A, 4A | Half-Bridge | N-Channel MOSFET | 110 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 9ns | 8-SOIC-EP | 9V ~ 16V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | IGBT, SiC MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
Allegro MicroSystems
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3-Phase | - | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 6 | -40°C ~ 175°C (TJ) | - | 28-TSSOP-EP | 5.5V ~ 50V | |
Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 3.7V, 7.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 9-DFN-EP (3x3) | 9V ~ 14V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.4V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 9-DFN-EP (3x3) | 9V ~ 14V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-SOIC | 4.5V ~ 18V | |
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Infineon Technologies
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Power Integrations
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 16-SOIC | 4.5V ~ 18V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 16V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 16V | |
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Renesas
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Synchronous | -, 4A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 8ns, 8ns | 10-DFN (3x3) | 4.5V ~ 5.5V | |
Renesas
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Synchronous | -, 4A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-QFN (3x3) | 4.5V ~ 5.5V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 2.4A, 2.4A | Half-Bridge | N-Channel MOSFET | 42 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 8ns | 8-MSOP-EP | 6V ~ 9.5V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 2.4A, 2.4A | Half-Bridge | N-Channel MOSFET | 42 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 8ns | 8-MSOP-EP | 6V ~ 9.5V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 12-DFN (4x4) | 9V ~ 14V | |
Renesas
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 70 V | Inverting, Non-Inverting | 1V, 2.5V | Surface Mount | 4 | -55°C ~ 150°C (TJ) | 9ns, 9ns | 16-SOIC | 8.5V ~ 15V | |
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Infineon Technologies
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Independent | 4A, 4A | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 22ns, 18ns | 8-PDIP | 10V ~ 20V | |
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Renesas
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Synchronous | -, 4A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 28ns, 32ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Infineon Technologies
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Independent | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 8-PDIP | 10V ~ 20V | |
Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 4V, 7V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC-EP | 9V ~ 14V | |
Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 4V, 7V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 16-QFN (5x5) | 9V ~ 14V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 4V, 7V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 16-QFN (5x5) | 9V ~ 14V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 16-QFN (5x5) | 9V ~ 14V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 16-QFN (5x5) | 9V ~ 14V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 3V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 12V ~ 20V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 14-DIP | 10V ~ 20V | |
Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 26ns, 18ns | 10-DFN (3x3) | 6.8V ~ 13.2V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.22V, 2.08V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC-EP | 4.5V ~ 16V | |
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Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | 0°C ~ 70°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 12-DFN (4x4) | 9V ~ 14V | |
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Monolithic Power Systems
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Independent | 7A, 8A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount, Wettable Flank | 2 | -40°C ~ 125°C (TJ) | 7.2ns, 5.5ns | 10-QFN (4x4) | 5V ~ 17V | |
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Monolithic Power Systems
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Independent | 7A, 8A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.2ns, 5.5ns | 8-QFN (4x4) | 5V ~ 17V | |
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Microchip Technology
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Monolithic Power Systems
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3-Phase | 800mA, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 3 | -40°C ~ 150°C (TJ) | - | 28-QFN (4x5) | 5V ~ 60V | |
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Monolithic Power Systems
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3-Phase | 800mA, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 3 | -40°C ~ 150°C (TJ) | - | 28-QFN (4x5) | 5V ~ 60V | |
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Renesas
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Synchronous | -, 4A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 10-DFN (3x3) | 4.5V ~ 5.5V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Single | 9A, 9A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Through Hole | 1 | 0°C ~ 150°C (TJ) | 20ns, 24ns | TO-220-5 | 4.5V ~ 18V | |
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Microchip Technology
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Single | 9A, 9A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 3V | Through Hole | 1 | 0°C ~ 150°C (TJ) | 20ns, 24ns | TO-220-5 | 4.5V ~ 18V | |
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Microchip Technology
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Single | 13A, 13A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 30ns, 32ns | 8-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
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Infineon Technologies
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Synchronous | 180mA, 260mA | Full-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | 4.7V, 9.3V | Through Hole | 1 | -25°C ~ 125°C (TJ) | 120ns, 50ns | 14-DIP | 10V ~ 15.6V | |
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Power Integrations
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Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.85V, 3.15V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC-EP | 4.5V ~ 16V | |
Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.22V, 2.08V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-TDFN (3x3) | 4.5V ~ 16V | |
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Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Inverting | 1.22V, 2.08V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC-EP | 4.5V ~ 16V | |
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Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Inverting | 1.22V, 2.08V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-TDFN (3x3) | 4.5V ~ 16V | |
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Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 1.22V, 2.08V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC-EP | 4.5V ~ 16V | |
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Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 1.85V, 3.15V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC-EP | 4.5V ~ 16V | |
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Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 1.85V, 3.15V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-TDFN (3x3) | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 40ns, 40ns (Max) | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 25ns, 33ns | 8-SOIC | 4.5V ~ 30V |
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