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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology
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Single | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 16V | |
Microchip Technology
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Independent | 2A, 2A | Half-Bridge | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.3V, 1.7V | Surface Mount | 4 | -20°C ~ 125°C (TJ) | 7ns, 7ns | 16-QFN (3x3) | 5V ~ 10V | |
Texas Instruments
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Independent | 1.2mA, 1.2mA | Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 3.5µs, 3µs | 28-SSOP | 4.5V ~ 5.5V | |
Texas Instruments
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Independent | 3A, 5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 14ns, 12ns | 10-WSON (4x4) | 3.5V ~ 14V | |
Texas Instruments
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Independent | 3A, 5A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 14ns, 12ns | 8-SOIC | 3.5V ~ 14V | |
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Allegro MicroSystems
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3-Phase | - | High-Side or Low-Side | N-Channel MOSFET | - | TTL | 0.8V, 1.5V | Surface Mount | 6 | -40°C ~ 105°C (TA) | 35ns, 20ns | 28-QFN (5x5) | 5.5V ~ 50V | |
Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Through Hole | 2 | 0°C ~ 70°C (TA) | 35ns, 25ns | 8-PDIP | 4.5V ~ 16V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 12ns, 13ns | 8-SOIC-EP | 4.5V ~ 20V | |
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Power Integrations
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Single | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Chassis Mount | 2 | - | - | Module | 0V ~ 16V | |
Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 1V, 2V | Through Hole | 2 | -40°C ~ 125°C (TA) | 20ns, 15ns | 8-PDIP | 4V ~ 15V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 19ns, 19ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.8V, 4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 10ns | 14-HTSSOP | 8V ~ 14V | |
Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 14-SOIC | 10V ~ 20V | |
Microchip Technology
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-DFN (3x3) | 4.5V ~ 5.5V | |
Infineon Technologies
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Synchronous | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 650 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 15ns, 15ns | PG-DSO-14-49 | 10V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 70°C (TA) | 25ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | - | N-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 17V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-MSOP-EP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 11ns, 11ns | 8-SOIC-EP | 4.5V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-MSOP | 4.5V ~ 18V | |
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Texas Instruments
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Independent | 3A, 3A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 2.3V, - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 430ns, 260ns | 10-WSON (4x4) | 9V ~ 14V | |
Trinamic Motion Control GmbH
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3-Phase | - | Half-Bridge | N-Channel MOSFET | 85 V | CMOS | - | Surface Mount | 6 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 48-TQFP-EP (7x7) | 10V ~ 60V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-MSOP | 4.5V ~ 18V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 9V ~ 20V | |
Texas Instruments
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Independent | 1.6A, 1.6A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 600ns, 600ns | 10-VSSOP | 9V ~ 14V | |
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Microchip Technology
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 5.5V | |
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Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 60 V | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 90ns, 40ns | 10-MSOP-EP | 3.5V ~ 15V | |
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Microchip Technology
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Synchronous | 2A, 3A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 330ns, 200ns | 8-SOIC | 9V ~ 16V | |
Texas Instruments
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Single | 4A, 6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 1.3V, 1.85V | Surface Mount | 1 | -40°C ~ 140°C (TJ) | 5ns, 5ns | 6-WSON (2x2) | 4V ~ 18V | |
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Infineon Technologies
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Synchronous | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 650 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 15ns, 15ns | PG-DSO-14-49 | 10V ~ 20V | |
Microchip Technology
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 60ns, 60ns | 8-SOIJ | 4.5V ~ 18V | |
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Texas Instruments
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 14V | |
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Texas Instruments
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Single | 9A, 9A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 1.1V, 2.7V | Through Hole | 1 | 0°C ~ 70°C (TA) | 20ns, 20ns | 8-PDIP | 4V ~ 15V | |
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Microchip Technology
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 4.5V ~ 18V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, SiC MOSFET | - | CMOS, TTL | 1V, 2.2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 10ns, 10ns | 16-SOIC-EP | -10V ~ 25V | |
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Microchip Technology
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Single | - | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | 2V, 4.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 8-SOIC | 4.75V ~ 32V | |
Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 12ns, 13ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 12ns, 15ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 125°C (TA) | 20ns, 20ns | TO-220-5 | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 10-DFN (3x2) | 3V ~ 42V | |
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Microchip Technology
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 12ns, 15ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 3V, 8V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 400ns, 400ns | 8-SOIC | 9V ~ 16V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 12ns, 12ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 12ns, 12ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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3-Phase | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | 600 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 6 | -40°C ~ 125°C (TJ) | 60ns, 26ns | PG-DSO-28-17 | 13V ~ 17.5V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 12ns, 13ns | 8-MSOP | 4.5V ~ 18V | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -10°C ~ 125°C (TJ) | 8ns, 8ns | 8-DFN (2x2) | 4.5V ~ 5.5V | |
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Texas Instruments
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Synchronous | 1.8A, 1.8A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 10-WSON (4x4) | 8V ~ 14V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 5.5V | |
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Infineon Technologies
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Synchronous | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 8.3V, 12.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
Texas Instruments
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Single | 4A, 8A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting, Non-Inverting | 1V, 2.4V | Surface Mount | 1 | -55°C ~ 125°C (TJ) | 8ns, 7ns | 6-SON (3x3) | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 135 V | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC-EP | 4.5V ~ 35V | |
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Infineon Technologies
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Synchronous | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 8.3V, 12.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-PDIP | 6V ~ 20V | |
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Microchip Technology
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Single | 13A, 13A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 30ns, 32ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 28ns, 32ns | 8-SOIC | 4.5V ~ 18V | |
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Texas Instruments
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Synchronous | 500mA, 500mA | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2V | Through Hole | 2 | 0°C ~ 70°C (TA) | - | 8-PDIP | 4.75V ~ 5.25V, 4.75V ~ 24V | |
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Microchip Technology
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Single | 9A, 9A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 20ns, 24ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 12ns, 13ns | 8-SOIC-EP | 4.5V ~ 20V | |
Infineon Technologies
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Independent | 3A, 3A | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 15ns | 16-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 150°C (TJ) | 23ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
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IXYS
|
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-SOIC-EP | 4.5V ~ 35V | |
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Microchip Technology
|
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
|
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 40ns, 40ns (Max) | 8-SOIC | 4.5V ~ 18V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | TO-263-5 | 4.5V ~ 35V | |
Microchip Technology
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Single | 12A, 12A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | 0°C ~ 70°C (TA) | 20ns, 24ns | TO-220-5 | 4.5V ~ 18V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | TO-220-5 | 4.5V ~ 35V | |
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Infineon Technologies
|
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.7V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 20ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
|
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 2.7V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 20ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 25ns, 33ns | 8-PDIP | 4.5V ~ 30V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | 0°C ~ 150°C (TJ) | 25ns, 25ns | TO-220-5 | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 9.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 2.4A, 2.4A | Half-Bridge | N-Channel MOSFET | 42 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 8ns | 8-MSOP-EP | 6V ~ 9.5V | |
STMicroelectronics
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Single | 1.3A, 1.7A | High-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 4.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 100ns, 100ns (Max) | 8-SOIC | 12V ~ 26V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 20ns, 20ns | 8-PDIP | 4.5V ~ 18V | |
IXYS
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Independent | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 5V, 9.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 15ns, 13ns | 16-SOIC | 10V ~ 20V | |
Texas Instruments
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Independent | 4A, 6A | Half-Bridge | IGBT, N-Channel MOSFET | - | CMOS/TTL | 1.25V, 1.6V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 5ns, 6ns | 16-SOIC | 3V ~ 5.5V | |
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Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
|
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 25ns, 33ns | 8-PDIP | 4.5V ~ 30V | |
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Infineon Technologies
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Independent | 1A, 1A | High-Side or Low-Side | N-Channel MOSFET | 200 V | Inverting | 0.7V, 2.2V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 35ns, 20ns | 8-PDIP | 10V ~ 20V | |
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Microchip Technology
|
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 20ns, 29ns | 8-MSOP | 4.5V ~ 18V | |
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Infineon Technologies
|
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Single | 1.6A, 3.3A | High-Side | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 43ns, 26ns | 16-SOIC | 0V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 12ns, 13ns | 8-SOIC-EP | 4.5V ~ 20V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 4 | -40°C ~ 85°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
|
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 4 | -40°C ~ 85°C (TA) | 14ns, 13ns | 14-DIP | 4.5V ~ 18V | |
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Infineon Technologies
|
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 80ns, 45ns | 8-SOIC | 10V ~ 15.6V | |
|
Microchip Technology
|
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 85°C (TA) | 40ns, 40ns (Max) | 8-PDIP | 4.5V ~ 18V |
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