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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.4V, 1.2V | Surface Mount | 1 | -40°C ~ 85°C | - | 6-WCSPG (0.8x1.2) | 2.7V ~ 28V | |
Diodes Incorporated
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Single | 4A, 9A | Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 77ns, 26ns | 8-SO | 4.5V ~ 25V | |
IXYS
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Independent | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 5V, 9.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 15ns, 13ns | 16-SOIC | 10V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 11.5ns, 10ns | 8-MSOP | 4.5V ~ 18V | |
Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 8-SOIC | 10V ~ 20V | |
Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 18ns | 8-SOIC-EP | 4.5V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 40ns, 40ns (Max) | 8-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 1.5A, 1.5A | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 4ns, 4ns | PG-VSON-10-4 | 4.2V ~ 11V | |
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Infineon Technologies
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Independent | 500mA, 500mA | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 11ns, 11ns | PG-VSON-10-4 | 4.2V ~ 11V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 20ns, 29ns | 8-MSOP | 4.5V ~ 18V | |
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Infineon Technologies
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Synchronous | 290mA, 700mA | Half-Bridge | IGBT, N-Channel MOSFET | 650 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 100ns, 35ns | PG-DSO-8-53 | 10V ~ 20V | |
Power Integrations
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Independent | 8A, 15A | Half-Bridge | IGBT | 1200 V | - | - | Surface Mount | 2 | -20°C ~ 85°C (TA) | 5ns, 10ns | Module | 14.5V ~ 15.5V | |
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Texas Instruments
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-WSON (4x4) | 8V ~ 14V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 4 | -40°C ~ 85°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
On Semiconductor
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Synchronous | 7.8A, 6.8A | High-Side or Low-Side | IGBT | - | Inverting | 0.75V, 4.3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9.2ns, 7.9ns | 16-SOIC | 12.5V ~ 20V | |
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Microchip Technology
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Single | 3A, 3A | High-Side or Low-Side | IGBT | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 13ns, 12ns | 8-SOIC | 4.5V ~ 18V | |
IXYS
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.7V, 2.3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 35ns, 35ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 150°C (TJ) | 20ns, 29ns | 8-PDIP | 4.5V ~ 18V | |
Microchip Technology
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Single | 3A, 3A | High-Side or Low-Side | IGBT | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount, Wettable Flank | 1 | -40°C ~ 125°C (TA) | 13ns, 12ns | 8-WDFN (2x2) | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 3A, 5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 45ns, 45ns | PG-VDSON-8-4 | 8V ~ 17V | |
IXYS
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Independent | 4.5A, 4.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 20ns | 14-SOIC | 10V ~ 20V | |
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IXYS
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 40ns, 20ns | 14-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 25ns, 33ns | 8-SOIC | 4.5V ~ 30V | |
On Semiconductor
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Synchronous | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 20ns | 8-SOIC | 10V ~ 20V | |
Intersil
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Independent | 2A, 2A | - | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 7.5ns, 10ns | 24-SOIC | 16.5V ~ 16.5V | |
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Microchip Technology
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 5.5V ~ 16V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 30ns, 30ns | 8-SOIC | 4.5V ~ 18V | |
IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC-EP | 4.5V ~ 35V | |
Microchip Technology
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Single | 6A, 6A | Low-Side | P-Channel MOSFET | - | Non-Inverting | 1.607V, 1.615V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-MSOP-EP | 4.5V ~ 13.2V | |
Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 16-SOIC | 4.5V ~ 18V | |
Texas Instruments
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Independent | 1.6A, 1.6A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 600ns, 600ns | 10-WSON (4x4) | 9V ~ 14V | |
Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.5V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-PDIP | 9V ~ 20V | |
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IXYS
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 40ns, 20ns | 8-SOIC | 10V ~ 20V | |
IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-SOIC | 4.5V ~ 35V | |
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Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 12V ~ 20V | |
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Microchip Technology
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Single | 9A, 9A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Through Hole | 1 | 0°C ~ 150°C (TJ) | 20ns, 24ns | 8-PDIP | 4.5V ~ 18V | |
Microchip Technology
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Independent | 1.5A, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 10-TDFN (2.5x2.5) | 5.25V ~ 16V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC | 4.5V ~ 35V | |
Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-PDIP | 10V ~ 20V | |
Infineon Technologies
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Independent | 500mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3.5V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 25ns, 15ns | 20-SOIC | 10V ~ 20V | |
IXYS
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.4V | Surface Mount | 3 | 150°C (TJ) | 90ns, 35ns | 28-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 150°C (TJ) | 28ns, 32ns | 8-PDIP | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.7V | Through Hole | 2 | -40°C ~ 125°C (TJ) | 40ns, 20ns | 14-DIP | 10V ~ 20V | |
Monolithic Power Systems
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
Texas Instruments
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Independent | 3A, 3A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 140°C (TJ) | 8ns, 7ns | 8-VSON (4x4) | 8V ~ 17V | |
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Microchip Technology
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Synchronous | 9A, 9A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 22ns, 22ns | 8-SOIC | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Independent | 2A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 3ns, 3ns | 10-TDFN-EP (3x3) | 4.5V ~ 28V | |
Intersil
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
Tamura
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 6V ~ 20V | |
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Monolithic Power Systems
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
Monolithic Power Systems
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount, Wettable Flank | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
STMicroelectronics
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Single | 1.3A, 1.7A | High-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 4.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 100ns, 100ns (Max) | 8-SOIC | 12V ~ 26V | |
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Microchip Technology
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Single | 9A, 9A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 20ns, 24ns | 8-PDIP | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Single | 3A, 7A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 6ns, 4ns | SOT-23-6 | 4V ~ 14V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC-EP | 4.5V ~ 18V | |
Renesas
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3-Phase | 1A, 2A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 3 | -40°C ~ 125°C (TA) | 40ns, 40ns | 48-QFN (7x7) | 4.5V ~ 60V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 18ns, 14ns | 12-MSOP-EP | 5V ~ 14V | |
Tamura
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-MSOP-EP | 9.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Single | 4A, 8A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 3ns, 3ns | 10-TDFN-EP (3x3) | 4.5V ~ 28V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 150°C (TJ) | 23ns, 25ns | 8-PDIP | 4.5V ~ 18V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
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Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 23ns, 25ns | 16-SOIC | 4.5V ~ 18V | |
Microchip Technology
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | - | 4-TQFN (1.2x1.2) | 2.7V ~ 9V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.4V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 125ns, 50ns | 28-SOIC | 10V ~ 20V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 28-SOIC | 12V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 40ns, 40ns (Max) | 8-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Through Hole | 6 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 28-PDIP | 10V ~ 20V | |
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Infineon Technologies
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Independent | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 180mA, 260mA | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 120ns, 50ns | 8-SOIC | 10V ~ 15.4V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 70°C (TA) | 40ns, 40ns (Max) | 8-PDIP | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.7V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 20ns | 14-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 18ns, 18ns | 8-SOIC | 4.5V ~ 16V | |
Renesas
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | 115 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 18ns, 14ns | 12-MSOP-EP | 5V ~ 14V | |
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Microchip Technology
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Single | 12A, 12A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 20ns, 24ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 18ns | 8-SOIC-EP | 4.5V ~ 20V | |
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Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 4 | 0°C ~ 70°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 4 | 0°C ~ 70°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
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Texas Instruments
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 14V | |
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Trinamic Motion Control GmbH
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3-Phase | - | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 1.65V, 3.85V | Surface Mount | 6 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 37-QFN-EP (7x7) | 10V ~ 60V | |
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Microchip Technology
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 4.5V ~ 18V | |
Texas Instruments
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Independent | 1.6A, 1.6A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 600ns, 600ns | 10-VSSOP | 9V ~ 14V | |
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Texas Instruments
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Independent | 3A, 3A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 3V, 8V | Surface Mount | 2 | -40°C ~ 140°C (TJ) | 8ns, 7ns | 8-SOIC | 8V ~ 17V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 6 | -40°C ~ 125°C (TA) | 125ns, 50ns | 44-PLCC, 32 Leads (16.51x16.51) | 10V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 13ns, 8ns | 10-MSOP-EP | 5V ~ 25V | |
Analog Devices Inc./Maxim Integrated
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Single | -50mA, 300mA | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 10-MSOP | 3V ~ 42V | |
Analog Devices Inc./Maxim Integrated
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Single | 1.1A, 1.1A | High-Side | N-Channel MOSFET | 80 V | Non-Inverting | 1.2V, 1.6V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 7ns | 8-MSOP-EP | 4V ~ 15V | |
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Renesas
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Independent | - | High-Side or Low-Side | N-Channel MOSFET | 25 V | TTL | 0.8V, 2.6V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 40-QFN (6x6) | 4.5V ~ 16V | |
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Analog Devices Inc./Maxim Integrated
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Single | 3A, 7A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 6ns, 4ns | SOT-23-6 | 6V ~ 14V | |
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Renesas
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Texas Instruments
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Independent | 1.2mA, 1.2mA | Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 3.5µs, 3µs | 28-SSOP | 4.5V ~ 5.5V | |
ROHM Semiconductor
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -25°C ~ 85°C (TA) | 130µs, 18µs | 5-HVSOF | 2.7V ~ 5.5V |
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