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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
Infineon Technologies
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Synchronous | 180mA, 260mA | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 45ns | 8-SOIC | 10V ~ 15.6V | |
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Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -10°C ~ 125°C (TJ) | 8ns, 8ns | 8-QFN (3x3) | 4.5V ~ 5.5V | |
On Semiconductor
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Single | 10.6A, 11.4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 23ns, 19ns | 8-SOIC | 4.5V ~ 18V | |
Infineon Technologies
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Synchronous | 100mA, 100mA | Half-Bridge | IGBT, N-Channel MOSFET | 950 V | Non-Inverting | - | Surface Mount | 2 | - | - | PG-VQFN-48-31 | 6V ~ 28V | |
Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 14-SOIC | 10V ~ 20V | |
Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 14-SOIC | 10V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
Microchip Technology
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Single | 10A, 10A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 38ns, 33ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Infineon Technologies
|
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Single | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 9.5ns, 9ns | 8-MSOP | 4.5V ~ 18V | |
Microchip Technology
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Single | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 9.5ns, 9ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Infineon Technologies
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Independent | 5A, 6A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | - | PG-VDSON-8-4 | 8V ~ 17V | |
Monolithic Power Systems
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Independent | 2.6A, 4.5A | Half-Bridge | N-Channel MOSFET | 115 V | - | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 12ns | 10-QFN (4x4) | 4.5V ~ 18V | |
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Monolithic Power Systems
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Independent | 4A, 4A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 1V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 12ns | 10-QFN (4x4) | 9V ~ 16V | |
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Texas Instruments
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 14V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 3.2A, 4.5A | Half-Bridge | N-Channel MOSFET | 42 V | Non-Inverting | 3V, 6.5V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 7ns | 8-DFN (2x3) | 4V ~ 6.5V | |
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Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 75ns, 25ns | 8-SOIC | 10V ~ 20V | |
Texas Instruments
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SON (3x3) | 6.8V ~ 8.8V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 19ns, 19ns | 8-MSOP | 4.5V ~ 18V | |
Monolithic Power Systems
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 165°C (TJ) | - | 22-QFN (4x5) | 0V ~ 100V | |
Microchip Technology
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Single | 1.5A, 1.5A | Half-Bridge | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 11.5ns, 10ns | SOT-23-6 | 4.5V ~ 18V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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On Semiconductor
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Independent | 5A, 5A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 9ns | 8-SOIC | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-PDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC | 4.5V ~ 35V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-uMAX-EP|8-uSOP-EP | 4V ~ 14V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC | 4.5V ~ 35V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
Infineon Technologies
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Independent | 3.5A, 3.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 15ns | 16-SOIC | 10V ~ 20V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
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Texas Instruments
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 6.8V ~ 8.8V | |
Microchip Technology
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Single | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 9.5ns, 9ns | 8-WDFN (2x2) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 18V | |
IXYS
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | IGBT, SiC MOSFET | - | Inverting, Non-Inverting | 2V, 4.25V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-TDFN (3x3) | 4V ~ 14V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-TDFN (3x3) | 4V ~ 14V | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 0.5V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-QFN (3x3) | 4.5V ~ 5.5V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-MSOP-EP | 4.5V ~ 18V | |
IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC-EP | 4.5V ~ 35V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC-EP | 4.5V ~ 35V | |
Infineon Technologies
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Single | 2.6A, 2.6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.2V, 1.9V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 5ns, 5ns | PG-SOT23-6-3 | 8.6V ~ 20V | |
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STMicroelectronics
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Single | 1.5A, 2.3A | High-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 4.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 130ns, 75ns (Max) | 14-SO | 12V ~ 26V | |
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Infineon Technologies
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Independent | 5A, 5A | Low-Side | N-Channel MOSFET | - | Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 5.3ns, 4.5ns | PG-DSO-8 | 4.5V ~ 20V | |
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Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Infineon Technologies
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Independent | 200mA, 350mA | High-Side and Low-Side | N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.2 V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 150ns, 50ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 4A, 4A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | CMOS, TTL | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 22ns, 18ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-MSOP | 4.5V ~ 18V | |
Diodes Incorporated
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 100 V | Inverting | 0.8V, 2.4V | Surface Mount | 6 | 150°C (TJ) | 90ns, 35ns | 28-SO | 10V ~ 20V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC-EP | 4.5V ~ 35V | |
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Infineon Technologies
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Synchronous | 210mA, 360mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 50ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | 1A, 1A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-PDIP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Texas Instruments
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Independent | 1.5A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 23ns, 19ns | 8-SOIC | 4.25V ~ 26V | |
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Monolithic Power Systems
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Independent | 2.5A, 2.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 12ns, 9ns | 8-SOIC | 9V ~ 18V | |
Texas Instruments
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 2.3V, - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 990ns, 715ns | 10-WSON (4x4) | 9V ~ 14V | |
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Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 1V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 20ns, 15ns | 8-SOIC | 4V ~ 15V | |
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IXYS
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
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Toshiba
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Single | 5mA | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.6V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | - | 10-WSON (3x3) | 5.75V ~ 26V | |
Infineon Technologies
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3-Phase | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | 600 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 6 | -40°C ~ 125°C (TJ) | 60ns, 26ns | PG-DSO-28 | 13V ~ 17.5V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | - | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 20ns, 16ns | 8-SOIC | 4.15V ~ 13.2V | |
Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 10ns, 10ns | 8-TDFN (2x3) | 4.5V ~ 18V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 1V, 2V | Through Hole | 2 | -55°C ~ 150°C (TJ) | 20ns, 15ns | 8-PDIP | 4.5V ~ 15V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 12ns, 12ns | 8-TDFN (2x3) | 4.5V ~ 18V |
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