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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated
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Synchronous | - | Half-Bridge | - | 30 V | - | - | Surface Mount | 2 | - | - | 8-SOIC | 4.15V ~ 7.5V | |
On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 30 V | Non-Inverting | - | Surface Mount | 2 | 0°C ~ 100°C (TA) | 20ns, 25ns | 10-MSOP | - | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | - | Half-Bridge | - | 30 V | - | - | Surface Mount | 2 | - | - | 8-SOIC | 4.15V ~ 13.2V | |
Texas Instruments
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Independent | 1.6A, 1.6A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 3V, 8V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 600ns, 600ns | 10-WSON (4x4) | 9V ~ 14V | |
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Texas Instruments
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Independent | 1.6A, 1.6A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 600ns, 600ns | 10-WSON (4x4) | 9V ~ 14V | |
Texas Instruments
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Synchronous | 3A, 3.2A | Half-Bridge | N-Channel MOSFET | 28 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 17ns, 12ns | 8-WSON (4x4) | 4.3V ~ 6.8V | |
On Semiconductor
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Synchronous | 4A, 4A | Half-Bridge | N-Channel MOSFET | 25 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -30°C ~ 125°C (TJ) | 8ns, 14ns | 8-SOIC | 4.5V ~ 6.5V | |
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On Semiconductor
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 26 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 14V | |
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On Semiconductor
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Single | 1A, 2A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting | 1.2V, 3.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 17ns, 17ns | 8-SOIC | 11V ~ 20V | |
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On Semiconductor
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 36ns, 32ns | 8-SOIC | 6.1V ~ 18V | |
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On Semiconductor
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 36ns, 32ns | 8-SOIC | 6.1V ~ 18V | |
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On Semiconductor
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Single | - | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 8-SOIC | 7V ~ 10V | |
On Semiconductor
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Single | - | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | - | Through Hole | 1 | -40°C ~ 150°C (TJ) | - | 8-PDIP | 7V ~ 10V | |
Microchip Technology
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Single | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 12ns, 12ns | 14-SOIC | 16V ~ 30V | |
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Microchip Technology
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Through Hole | 1 | -40°C ~ 150°C (TJ) | - | 8-PDIP | 25V (Max) | |
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Microchip Technology
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Single | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 12ns, 12ns | 14-SOIC | 16V ~ 30V | |
Microchip Technology
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | - | 16-SOIC | 25V (Max) | |
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Infineon Technologies
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Independent | 1A, 1A | High-Side or Low-Side | N-Channel MOSFET | 200 V | Inverting | 0.7V, 2.2V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 35ns, 20ns | 8-PDIP | 10V ~ 20V | |
Infineon Technologies
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Independent | 1A, 1A | High-Side or Low-Side | N-Channel MOSFET | 200 V | Inverting | 0.7V, 2.2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 35ns, 20ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 1A, 1A | High-Side or Low-Side | N-Channel MOSFET | 200 V | Inverting | 0.7V, 2.2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 35ns, 20ns | 8-SOIC | 10V ~ 20V | |
Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 4V, 7V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 9V ~ 14V | |
Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 4V, 7V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 16-QFN (5x5) | 9V ~ 14V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 9V ~ 14V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 16-QFN (5x5) | 9V ~ 14V | |
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 22 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 26ns, 18ns | 8-SOIC | 10.8V ~ 13.2V | |
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Renesas
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Independent | 1.4A, 1.3A | Half-Bridge | N-Channel MOSFET | 80 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 5ns, 5ns | 8-SOIC | 9V ~ 15V | |
Renesas
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Independent | 1.4A, 1.3A | Half-Bridge | N-Channel MOSFET | 80 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 5ns, 5ns | 12-QFN (4x4) | 9V ~ 15V | |
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Renesas
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Independent | 200mA, 200mA | High-Side | N-Channel MOSFET | 120 V | Non-Inverting | 1.4V, 3V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 200ns, 200ns | 8-SOIC | 4.5V ~ 6.5V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 4V, 7V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 9V ~ 14V | |
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Renesas
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC | 9V ~ 14V | |
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Renesas
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 15 V | Non-Inverting | - | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 15 V | Non-Inverting | - | Surface Mount | 4 | 0°C ~ 125°C (TJ) | 20ns, 20ns | 14-SOIC | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 15 V | Non-Inverting | - | Surface Mount | 4 | 0°C ~ 125°C (TJ) | 20ns, 20ns | 14-SOIC | 10.8V ~ 13.2V | |
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STMicroelectronics
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Synchronous | 170mA, 270mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | RC Input Circuit | - | Through Hole | 2 | -40°C ~ 150°C (TJ) | - | 8-Mini DIP | 10V ~ 16.6V | |
STMicroelectronics
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Independent | 400mA, 650mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 1.5V, 3.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 50ns, 30ns | 8-SOIC | 17V (Max) | |
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STMicroelectronics
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Independent | 400mA, 650mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 1.5V, 3.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 50ns, 30ns | 14-SO | 17V (Max) | |
IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 18ns, 16ns | TO-263-5 | 8.5V ~ 35V | |
NXP Semiconductors
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 55 V | Non-Inverting | 0.8V, 2V | Surface Mount | 4 | -40°C ~ 150°C (TJ) | 80ns, 80ns | 20-SOIC | 5.5V ~ 28V | |
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Texas Instruments
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Synchronous | 3A, 3.2A | Half-Bridge | N-Channel MOSFET | 28 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 17ns, 12ns | 8-WSON (4x4) | 4.3V ~ 6.8V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 26ns, 18ns | 14-SOIC | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 26ns, 18ns | 16-QFN (4x4) | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | 0°C ~ 125°C (TJ) | 26ns, 18ns | 14-SOIC | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | 0°C ~ 125°C (TJ) | 26ns, 18ns | 16-QFN (4x4) | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 26ns, 18ns | 14-SOIC | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 26ns, 18ns | 16-QFN (4x4) | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | 0°C ~ 125°C (TJ) | 26ns, 18ns | 14-SOIC | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | 0°C ~ 125°C (TJ) | 26ns, 18ns | 16-QFN (4x4) | 10.8V ~ 13.2V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 35ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 35ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 35ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 35ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
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Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 35ns, 25ns | 8-MSOP | 4.5V ~ 16V | |
Infineon Technologies
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Independent | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 16-PDIP | 10V ~ 20V | |
Infineon Technologies
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Independent | 2A, 2A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 14-PDIP | 3.3V ~ 20V | |
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On Semiconductor
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Independent | 90mA, 180mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 230ns, 90ns | 8-SOIC | 10V ~ 20V | |
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | -10°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 8ns, 8ns | 8-QFN (3x3) | 4.5V ~ 5.5V | |
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Renesas
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 33 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 8ns | 8-SOIC | 4.5V ~ 5.5V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 26ns, 18ns | 8-SOIC | 7V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 26ns, 18ns | 8-SOIC | 10.8V ~ 13.2V | |
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Renesas
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Synchronous | 1.25A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 4 | 0°C ~ 125°C (TJ) | 26ns, 18ns | 14-SOIC | 10.8V ~ 13.2V | |
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Infineon Technologies
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- | - | Low-Side | - | - | Inverting, Non-Inverting | - | Surface Mount | 2 | - | - | 8-SOIC | 6V ~ 20V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 28-SOIC | 11.5V ~ 20V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 44-PLCC, 32 Leads (16.58x16.58) | 11.5V ~ 20V | |
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Infineon Technologies
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Independent | 210mA, 360mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 50ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 200mA, 350mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 150ns, 50ns | 14-SOIC | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | 125°C (TJ) | 90ns, 40ns | 28-SOIC | 10V ~ 20V | |
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Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 28-SOIC | 11.5V ~ 20V | |
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On Semiconductor
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Synchronous | 2A, 2A | Half-Bridge | N-Channel MOSFET | 26 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 14V | |
Renesas
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Single | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 16V | |
Renesas
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Synchronous | 4A, 4A | High-Side or Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.6V, 2.4V | Through Hole | 2 | -40°C ~ 125°C (TJ) | 4ns, 4ns | 8-PDIP | 4.5V ~ 16V | |
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Renesas
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Synchronous | 4A, 4A | High-Side or Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.6V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 4ns, 4ns | 8-SOIC | 4.5V ~ 16V | |
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Renesas
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Synchronous | 3.5A, 3.5A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 14.5ns, 15ns | 8-SOIC | 4.5V ~ 16.5V | |
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Renesas
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Single | 3.5A, 3.5A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 125°C (TJ) | 14.5ns, 15ns | 8-PDIP | 4.5V ~ 16.5V | |
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Renesas
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Single | 3.5A, 3.5A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 14.5ns, 15ns | 8-SOIC | 4.5V ~ 16.5V | |
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Single | 12A, 12A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 12ns, 12.2ns | 8-SOIC | 4.5V ~ 12V | |
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-PDIP | 4.5V ~ 15V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 15V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-PDIP | 4.5V ~ 16V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 16V | |
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Independent | 2A, 2A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 4 | -40°C ~ 85°C (TA) | 13.5ns, 13ns | 16-QFN (4x4) | 4.5V ~ 18V | |
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Renesas
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Independent | 2A, 2A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 4 | -40°C ~ 85°C (TA) | 13.5ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
Renesas
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Independent | 2A, 2A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 4 | -40°C ~ 85°C (TA) | 13.5ns, 13ns | 16-QSOP | 4.5V ~ 18V | |
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 4V, 7V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 10ns, 10ns | 8-SOIC-EP | 9V ~ 14V | |
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 15 V | Non-Inverting | - | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 10.8V ~ 13.2V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Inverting | - | Surface Mount | 3 | 0°C ~ 70°C (TA) | - | 8-SO | 1.8V ~ 6V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Inverting | - | Through Hole | 3 | 0°C ~ 70°C (TA) | - | 8-PDIP | 1.8V ~ 6V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Through Hole | 4 | 0°C ~ 125°C (TJ) | 130ns, 60ns | 24-PDIP | 10V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Through Hole | 4 | -40°C ~ 125°C (TJ) | 130ns, 60ns | 24-PDIP | 10V ~ 15V | |
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On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 30 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 85°C (TA) | 40ns, 30ns | 8-SOIC | 4.6V ~ 13.2V | |
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On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 25 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 25ns, 20ns | 8-SOIC | 4.15V ~ 13.2V | |
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On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 30 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 25ns, 20ns | 8-SOIC | 4.15V ~ 7.5V | |
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On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 35 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 20ns, 11ns | 8-SOIC | 4.6V ~ 13.2V | |
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On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 25 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 25ns, 20ns | 8-SOIC | 4.15V ~ 13.2V | |
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Microchip Technology
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Single | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 12ns, 12ns | 14-SOIC | 16V ~ 30V |
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