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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
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IXYS
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 8ns | 8-SOIC | 4.5V ~ 30V | |
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IXYS
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 8ns | 8-SOIC | 4.5V ~ 30V | |
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IXYS
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 8ns | 8-DFN (3x3) | 4.5V ~ 30V | |
IXYS
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 35ns, 35ns | 8-SOIC | 10V ~ 20V | |
Diodes Incorporated
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.7V, 2.3V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SO | 10V ~ 20V | |
Infineon Technologies
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Single | 160mA, 240mA | High-Side | N-Channel MOSFET | 100 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 85ns, 40ns | PG-SOT23-6 | 10V ~ 18V | |
Infineon Technologies
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Single | 1.5A, 1.5A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | SOT-23-5 | 10.2V ~ 20V | |
On Semiconductor
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Single | 2.5A, 2.8A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 19ns, 13ns | SOT-23-5 | 5V ~ 18V | |
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Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 30ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 30ns | 8-SOIC | 10V ~ 20V | |
IXYS
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- | - | - | - | - | - | - | Through Hole | - | - | - | 8-DIP | - | |
Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Diodes Incorporated
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 20ns | 8-SO | 10V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 18ns | 8-MLF® (3x3) | 4.5V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 5.25V ~ 16V | |
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Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 180mA, 260mA | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 120ns, 50ns | 8-SOIC | 10V ~ 15.4V | |
Tamura
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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IXYS
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Independent | 4.5A, 4.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 20ns | 8-SOIC | 10V ~ 20V | |
On Semiconductor
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Synchronous | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.3V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 85ns, 35ns | 8-SOIC | 10V ~ 20V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC | 4.5V ~ 35V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC | 4.5V ~ 35V | |
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Infineon Technologies
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Independent | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | 600 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 48ns, 24ns | PG-DSO-8 | 10V ~ 20V | |
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IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-SOIC | 4.5V ~ 35V | |
Renesas
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Synchronous | 3A, 4A | Half-Bridge | N-Channel MOSFET | 115 V | Non-Inverting | 1.47V, 1.84V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 435ns, 365ns | 10-TDFN (4x4) | 6V ~ 18V | |
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IXYS
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 20ns, 40ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 35ns, 25ns | 8-SOIC | 4.5V ~ 16V | |
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IXYS
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 8ns | 8-SOIC | 4.5V ~ 30V | |
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Diodes Incorporated
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Independent | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 13ns | 16-SO | 10V ~ 20V | |
IXYS
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 40ns, 20ns | 14-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 210mA, 360mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 50ns | 8-SOIC | 10V ~ 20V | |
Texas Instruments
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Infineon Technologies
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Synchronous | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 650 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 15ns, 15ns | PG-DSO-8-53 | 10V ~ 20V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC-EP | 4.5V ~ 35V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC-EP | 4.5V ~ 35V | |
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IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-SOIC | 4.5V ~ 35V | |
Microchip Technology
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Independent | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 11ns, 11ns | 8-SOIC-EP | 4.5V ~ 20V | |
Infineon Technologies
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Independent | 4A, 8A | Half-Bridge | N-Channel, P-Channel MOSFET | 1500 V | Non-Inverting | -, 1.65V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 6.5ns, 4.5ns | PG-DSO-16-11 | 20V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC | 4.5V ~ 35V | |
Unitrode
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Infineon Technologies
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 2.7V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 20ns | 14-SOIC | 10V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 25ns | 8-SOIC | 4V ~ 14V | |
Infineon Technologies
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Single | - | High-Side or Low-Side | IGBT, N-Channel, P-Channel MOSFET | 1200 V | - | 1.5V, 3.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 50ns, 90ns | PG-DSO-14-43 | 13V ~ 18V | |
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Infineon Technologies
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Microchip Technology
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Single | 10A, 10A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 38ns, 33ns | 8-SOIC | 4.5V ~ 18V | |
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IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | 8-SOIC-EP | 4.5V ~ 35V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Inverting | 0.6V, 1.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | - | TSOT-23-5 | 1.8V ~ 5.5V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 18ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Synchronous | 2A, 3A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 330ns, 200ns | 8-SOIC | 9V ~ 16V | |
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Microchip Technology
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Independent | 2A, 3A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 3V, 8V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 6ns | 8-SOIC | 9V ~ 16V | |
Infineon Technologies
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Single | 1.6A, 3.3A | High-Side | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 43ns, 26ns | 16-SOIC | 0V ~ 18V | |
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Microchip Technology
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Independent | 2A, 3A | Half-Bridge | N-Channel MOSFET | 118 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 6ns | 8-SOIC | 9V ~ 16V | |
IXYS
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- | - | - | - | - | - | - | Surface Mount | - | - | - | 8-SOIC | - | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | High-Side or Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.7V, 2.2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 16ns, 16ns | 8-SO | 4.5V ~ 13.2V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 9V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Independent | 2.5A, 3A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.85V, 3.25V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 5ns | 8-MSOP-EP | 4.5V ~ 13.5V | |
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Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 16V | |
Infineon Technologies
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Independent | 1A, 2A | Half-Bridge | IGBT, N-Channel MOSFET | 1200 V | Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 20ns, 20ns | PG-DSO-18-2 | 14V ~ 18V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC-EP | 4.5V ~ 35V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 25ns, 20ns | 8-SOIC | 4.5V ~ 18V | |
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Infineon Technologies
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Independent | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 6V, 9.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 17ns | 16-SOIC | 10V ~ 20V | |
Microchip Technology
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Single | 13A, 13A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 30ns, 32ns | 8-DFN-S (6x5) | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 60 V | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 90ns, 40ns | 10-MSOP-EP | 3.5V ~ 15V | |
Analog Devices Inc./Maxim Integrated
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Single | 1.3A, 7.6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 82ns, 12.5ns | 6-TDFN (3x3) | 4V ~ 12.6V | |
Analog Devices Inc./Maxim Integrated
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Single | 2.4A, 2.4A | High-Side | N-Channel MOSFET | 80 V | Non-Inverting | 1.3V, 1.6V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 10ns, 7ns | TSOT-23-6 | 4V ~ 15V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | TO-263-5 | 4.5V ~ 35V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | TO-263-5 | 4.5V ~ 35V | |
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Infineon Technologies
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Synchronous | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.7V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 40ns, 20ns | 8-SOIC | 10V ~ 20V | |
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IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | 8-SOIC-EP | 4.5V ~ 35V | |
Renesas
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Independent | - | - | N-Channel MOSFET | - | Inverting | 0.8V, 2V | Through Hole | 2 | 0°C ~ 70°C (TA) | 20ns, 20ns | 8-PDIP | 4.5V ~ 15V | |
Infineon Technologies
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Independent | 2A, 2A | Half-Bridge | IGBT | 1200 V | Inverting, Non-Inverting | 1.5V, 3.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 30ns, 50ns | PG-DSO-36-58 | 13V ~ 20V | |
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Renesas
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Synchronous | 3.5A, 3.5A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 14.5ns, 15ns | 8-SOIC | 4.5V ~ 16.5V | |
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Analog Devices Inc./Maxim Integrated
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Single | 2.4A, 2.4A | High-Side | N-Channel MOSFET | 80 V | Non-Inverting | 1.3V, 1.6V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 10ns, 7ns | 8-MSOP-EP | 8V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Single | 2.4A, 2.4A | High-Side | N-Channel MOSFET | 80 V | Non-Inverting | 1.3V, 1.6V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 10ns, 7ns | 8-MSOP-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 20ns, 20ns | 8-SOIC | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2.5A, 3A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.85V, 3.25V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 8ns, 5ns | 8-MSOP-EP | 4.5V ~ 13.5V | |
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IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | TO-263-5 | 4.5V ~ 35V | |
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IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | TO-220-5 | 4.5V ~ 35V | |
IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | TO-220-5 | 4.5V ~ 35V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 125°C (TJ) | - | 10-MSOP | 3V ~ 42V | |
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Renesas
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Single | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-PDIP | 4.5V ~ 16V | |
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Renesas
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Single | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 7.5ns, 10ns | 8-SOIC | 4.5V ~ 16V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TA) | - | 8-SO | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | 4A, 6A | Half-Bridge | IGBT | - | Non-Inverting | 1.5V, 3.5V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 25ns, 30ns | 16-SOIC | 2.5V ~ 6.5V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2.5A, 3A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.85V, 3.25V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 8ns, 5ns | 8-MSOP-EP | 4.5V ~ 13.5V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 135 V | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
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Infineon Technologies
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Independent | 2.4A, 2.4A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | 1200 V | Inverting, Non-Inverting | 1.5V, 3.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 30ns, 50ns | PG-DSO-36-58 | 13V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 135 V | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 11ns, 11ns | TO-263-5 | 12.5V ~ 35V | |
IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 11ns, 11ns | TO-263-5 | 9V ~ 35V | |
IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3.5V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 11ns, 11ns | TO-263-5 | 12.5V ~ 35V | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 70°C (TA) | - | 8-SO | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 4 | 0°C ~ 125°C (TJ) | - | 20-SO | 8V ~ 48V | |
Powerex Inc.
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Single | 5A, 5A | Half-Bridge | IGBT | - | CMOS | - | Through Hole | 1 | -20°C ~ 70°C | 400ns, 300ns | Module | 14V ~ 17V | |
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Powerex Inc.
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Single | 5A, 5A | Low-Side | IGBT | - | Non-Inverting | - | Through Hole | 1 | -20°C ~ 60°C | 600ns, 400ns | Module | 14V ~ 15V | |
Power Integrations
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Independent | 6A, 6A | Half-Bridge | IGBT | 1200 V | - | - | Surface Mount | 2 | -40°C ~ 105°C (TA) | 20ns, 13ns | Module | 14.5V ~ 15.5V | |
Powerex Inc.
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Single | 12A, 12A | Low-Side | IGBT | - | Non-Inverting | - | Through Hole | 1 | -20°C ~ 60°C (TA) | 300ns, 300ns | Module | 14.2V ~ 15.8V | |
Powerex Inc.
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Single | 12A, 12A | Low-Side | IGBT | - | Non-Inverting | - | Through Hole | 1 | -20°C ~ 60°C (TA) | 300ns, 300ns | Module | 14.2V ~ 15.8V | |
Power Integrations
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Independent | 8A, 8A | High-Side or Low-Side | IGBT | 1700 V | - | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 17ns, 15ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Independent | 8A, 8A | High-Side or Low-Side | IGBT | 1200 V | - | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 17ns, 15ns | Module | 14.5V ~ 15.5V |
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