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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
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Power Integrations
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Independent | 35A, 35A | High-Side or Low-Side | IGBT, N-Channel, P-Channel MOSFET | 1700 V | - | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 20ns, 20ns | Module | 14.5V ~ 15.5V | |
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Power Integrations
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Independent | 35A, 35A | High-Side or Low-Side | IGBT | 1700 V | - | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 20ns, 20ns | Module | 14.5V ~ 15.5V | |
Power Integrations
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- | 6A, 6A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | - | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 100ns, 80ns | Module | 15V | |
Power Integrations
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Single | 35A, 35A | High-Side or Low-Side | IGBT | 6500 V | - | - | Surface Mount | 1 | -40°C ~ 85°C (TA) | 9ns, 30ns | Module | 23.5V ~ 26.5V | |
Power Integrations
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Single | 35A, 35A | High-Side or Low-Side | IGBT | 3300 V | - | - | Surface Mount | 1 | -40°C ~ 85°C (TA) | 9ns, 30ns | Module | 14.5V ~ 15.5V | |
On Semiconductor
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 35 V | Non-Inverting | 1V, 2V | Surface Mount | 2 | 0°C ~ 150°C (TJ) | 16ns, 11ns | 8-SOIC | 4.5V ~ 13.2V | |
Infineon Technologies
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Diodes Incorporated
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Independent | 1.5A, 2A | Half-Bridge | N-Channel MOSFET | 50 V | CMOS/TTL | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 16ns, 18ns | W-DFN3030-10 | 8V ~ 14V | |
Diodes Incorporated
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Synchronous | 290mA, 600mA | Half-Bridge | N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 70ns, 35ns | 8-SO Type TH | 10V ~ 20V | |
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Diodes Incorporated
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Single | 2.5A, 2.8A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | CMOS, TTL | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 20ns, 15ns | TSOT-23-5 | 4.5V ~ 18V | |
Texas Instruments
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Single | 4A, 4A | Low-Side | IGBT, N-Channel MOSFET | - | Inverting, Non-Inverting | 1V, 2.4V | Surface Mount | 1 | -40°C ~ 140°C (TJ) | 8ns, 7ns | 6-SON (3x3) | 4.5V ~ 18V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-DIP | 4.5V ~ 35V | |
Infineon Technologies
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Single | 4A, 8A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 6.5ns, 4.5ns | PG-SOT23-5-1 | 4.5V ~ 20V | |
Diodes Incorporated
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SO | 10V ~ 20V | |
IXYS
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 10ns, 8ns | 8-SOIC | 4.5V ~ 30V | |
Infineon Technologies
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Single | 160mA, 240mA | High-Side | N-Channel MOSFET | 600 V | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 85ns, 40ns | PG-SOT23-6 | 10V ~ 18V | |
IXYS
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
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Texas Instruments
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Independent | 4A, 4A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 1V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 20ns, 15ns | 8-SOIC | 4V ~ 15V | |
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Infineon Technologies
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Synchronous | 210mA, 360mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 50ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Independent | 5A, 5A | Low-Side | N-Channel MOSFET | - | Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 5.3ns, 4.5ns | PG-DSO-8 | 4.5V ~ 20V | |
Infineon Technologies
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Single | 2.6A, 2.6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.2V, 1.9V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 5ns, 5ns | PG-SOT23-6-3 | 8.6V ~ 20V | |
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IXYS
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC | 4.5V ~ 35V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC | 4.5V ~ 35V | |
Microchip Technology
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Single | 1.5A, 1.5A | Half-Bridge | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 11.5ns, 10ns | SOT-23-6 | 4.5V ~ 18V | |
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Texas Instruments
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 15ns, 15ns | 8-SOIC | 8V ~ 14V | |
Infineon Technologies
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 200 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
Infineon Technologies
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Synchronous | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 70ns, 35ns | 8-SOIC | 10V ~ 20V | |
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IXYS
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.6V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
Texas Instruments
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3-Phase | 750mA, 1.5A | High-Side and Low-Side | N-Channel MOSFET | 105 V | Non-Inverting | 0.8V, 2V | Surface Mount | 3 | -40°C ~ 125°C (TA) | 12ns, 12ns | 20-TSSOP | 5V ~ 20V | |
ROHM Semiconductor
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -25°C ~ 85°C (TA) | 130µs, 18µs | 5-HVSOF | 2.7V ~ 5.5V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 18ns | 8-SOIC-EP | 4.5V ~ 20V | |
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IXYS
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- | - | - | - | - | - | - | Through Hole | - | - | - | 8-DIP | - | |
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Infineon Technologies
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Synchronous | 180mA, 260mA | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 120ns, 50ns | 8-SOIC | 10V ~ 15.4V | |
Microchip Technology
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | - | 4-TQFN (1.2x1.2) | 2.7V ~ 9V | |
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Infineon Technologies
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Independent | 2.3A, 3.3A | Low-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 6V ~ 20V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC | 4.5V ~ 35V | |
Microchip Technology
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Independent | 1.5A, 1A | Half-Bridge | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 10-TDFN (2.5x2.5) | 5.25V ~ 16V | |
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Infineon Technologies
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Single | 290mA, 600mA | High-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 12V ~ 20V | |
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IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-SOIC | 4.5V ~ 35V | |
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IXYS
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 40ns, 20ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 1A, 1A | Half-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC | 5.5V ~ 16V | |
On Semiconductor
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Synchronous | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 25ns, 20ns | 8-SOIC | 10V ~ 20V | |
IXYS
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Independent | 1.9A, 2.3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 40ns, 20ns | 14-SOIC | 10V ~ 20V | |
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IXYS
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Independent | 4.5A, 4.5A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 25ns, 20ns | 14-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Synchronous | 290mA, 700mA | Half-Bridge | IGBT, N-Channel MOSFET | 650 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 100ns, 35ns | PG-DSO-8-53 | 10V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 20ns, 29ns | 8-MSOP | 4.5V ~ 18V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 18ns | 8-SOIC-EP | 4.5V ~ 20V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 11.5ns, 10ns | 8-MSOP | 4.5V ~ 18V | |
IXYS
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Independent | 5A, 5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7ns, 7ns | 8-MSOP-EP | 5V ~ 20V | |
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Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting, Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
Microchip Technology
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Single | 6A, 6A | Low-Side | P-Channel MOSFET | - | Non-Inverting | 1.607V, 1.615V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-MSOP-EP | 4.5V ~ 13.2V | |
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Infineon Technologies
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 600 V | RC Input Circuit | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 80ns, 45ns | 8-SOIC | 10V ~ 15.6V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 12ns, 13ns | 8-SOIC-EP | 4.5V ~ 20V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 20ns, 29ns | 8-MSOP | 4.5V ~ 18V | |
IXYS
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Independent | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 500 V | Non-Inverting | 5V, 9.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 15ns, 13ns | 16-SOIC | 10V ~ 20V | |
Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 20ns, 20ns | 8-PDIP | 4.5V ~ 18V | |
IXYS
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- | - | - | - | - | - | - | Surface Mount | - | - | - | 8-SOIC | - | |
STMicroelectronics
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Single | 1.3A, 1.7A | High-Side | IGBT, N-Channel MOSFET | - | Non-Inverting | 0.8V, 4.2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 100ns, 100ns (Max) | 8-SOIC | 12V ~ 26V | |
Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | 0°C ~ 70°C (TA) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 12ns, 13ns | 8-SOIC-EP | 4.5V ~ 20V | |
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Infineon Technologies
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Synchronous | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 8.3V, 12.6V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 5.5V | |
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IXYS
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- | - | - | - | - | - | - | Surface Mount | - | - | - | 8-SOIC | - | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | 0°C ~ 150°C (TJ) | 25ns, 25ns | 8-SOIC | 4.5V ~ 18V | |
IXYS
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Single | 9A, 9A | Low-Side | IGBT, SiC MOSFET | - | CMOS, TTL | 1V, 2.2V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 10ns, 10ns | 16-SOIC-EP | -10V ~ 25V | |
Infineon Technologies
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Synchronous | 2.5A, 2.5A | Half-Bridge | IGBT, N-Channel MOSFET | 650 V | Non-Inverting | 1.1V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TA) | 15ns, 15ns | PG-DSO-14-49 | 10V ~ 20V | |
Texas Instruments
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Single | 4A, 6A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 1.3V, 1.85V | Surface Mount | 1 | -40°C ~ 140°C (TJ) | 5ns, 5ns | 6-WSON (2x2) | 4V ~ 18V | |
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Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
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Infineon Technologies
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Single | 250mA, 500mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 80ns, 40ns | 8-SOIC | 9V ~ 20V | |
Microchip Technology
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-DFN (3x3) | 4.5V ~ 5.5V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | 19ns, 19ns | 8-SOIC | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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- | - | High-Side | - | - | Non-Inverting | - | Through Hole | 1 | - | - | 18-DIP | 11.4V ~ 12.6V | |
IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-SOIC-EP | 4.5V ~ 35V | |
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Microchip Technology
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 20ns, 29ns | 8-PDIP | 4.5V ~ 18V | |
Infineon Technologies
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Independent | 4A, 8A | Half-Bridge | N-Channel, P-Channel MOSFET | - | Non-Inverting | -, 1.65V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 6.5ns, 4.5ns | PG-TFLGA-13-1 | 20V | |
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Microchip Technology
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Single | 3A, 3A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 20ns, 20ns | 8-SOIC | 4.5V ~ 16V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-SOIC | 4.5V ~ 35V | |
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IXYS
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Single | 9A, 9A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Through Hole | 1 | -55°C ~ 150°C (TJ) | 22ns, 15ns | 8-DIP | 4.5V ~ 35V | |
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IXYS
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- | - | - | - | - | - | - | Through Hole | - | - | - | 14-PDIP | - | |
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IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Through Hole | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-DIP | 4.5V ~ 35V | |
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IXYS
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Independent | 4A, 4A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 9ns, 8ns | 8-SOIC | 4.5V ~ 35V | |
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Infineon Technologies
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Independent | 200mA, 350mA | High-Side or Low-Side | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.9V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 130ns, 50ns | 8-SOIC | 5V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Inverting | 0.6V, 1.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | - | TSOT-23-5 | 1.8V ~ 5.5V | |
Microchip Technology
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Synchronous | 1A, 1A | Full-Bridge | N-Channel MOSFET | 108 V | Non-Inverting | 0.8V, 2.2V | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 16-TSSOP | 5.25V ~ 16V | |
On Semiconductor
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Independent | 3A, 3A | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 4.5V, 9.5V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 25ns, 20ns | 14-DIP | 10V ~ 20V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 12ns, 12ns | 8-SOIC | 4.5V ~ 18V | |
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Infineon Technologies
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Synchronous | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 130ns, 50ns | 8-SOIC | 5V ~ 20V | |
Infineon Technologies
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3-Phase | - | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | 620 V | Inverting | 1.1V, 1.7V | Surface Mount | 6 | -40°C ~ 125°C (TJ) | 60ns, 26ns | PG-TSSOP-28 | 13V ~ 17.5V | |
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Infineon Technologies
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Independent | 210mA, 360mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 100ns, 50ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Single | 6A, 6A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 150°C (TJ) | 20ns, 20ns | TO-220-5 | 4.5V ~ 18V | |
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Microchip Technology
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Single | 10A, 10A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 38ns, 33ns | 8-SOIC | 4.5V ~ 18V | |
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Texas Instruments
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Synchronous | 2.5A, 3.5A | Half-Bridge | N-Channel MOSFET | 120 V | Non-Inverting | 1.3V, 1.9V | Surface Mount | 2 | -40°C ~ 125°C | 12ns, 10ns | 8-SOIC | 5.5V ~ 16V | |
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IXYS
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Independent | 2A, 2A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 7.5ns, 6.5ns | 8-SOIC-EP | 4.5V ~ 35V | |
|
IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | 8-SOIC-EP | 4.5V ~ 35V | |
|
IXYS
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Single | 14A, 14A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 25ns, 18ns | 8-SOIC-EP | 4.5V ~ 35V | |
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Infineon Technologies
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Independent | 290mA, 600mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Non-Inverting | 0.8V, 2.5V | Surface Mount | 2 | -40°C ~ 125°C (TA) | 100ns, 35ns | 8-SOIC | 10V ~ 20V | |
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Microchip Technology
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Independent | 4.5A, 4.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 150°C (TJ) | 12ns, 12ns | 8-PDIP | 4.5V ~ 18V |
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