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| Part & Mfr | Total Stock | Pricing & RFQ | Channel Type | Current | Driven Configuration | Gate Type | High Side Voltage | Input Type | Logic Voltage | Mounting Type | Number of Drivers | Operating Temperature | Rise | Supplier Device Package | Voltage | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 135 V | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
Renesas
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Independent | 6A, 6A | Low-Side | N-Channel MOSFET | - | Inverting | 1.85V, 3.15V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 20ns, 20ns | 8-SOIC-EP | 4.5V ~ 16V | |
Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
Analog Devices Inc./Maxim Integrated
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Single | 4A, 8A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 22ns, 16ns | 10-TDFN (3x3) | 4.5V ~ 28V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | 0°C ~ 70°C (TA) | 20ns, 20ns | 8-PDIP | 4.5V ~ 18V | |
Analog Devices Inc./Maxim Integrated
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Synchronous | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.6V, 1.4V | Surface Mount | 2 | -40°C ~ 85°C (TA) | - | 8-SO | 2.7V ~ 5.5V | |
Renesas
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | 0°C ~ 70°C (TA) | 33ns, 27ns | 8-PDIP | 4V ~ 6V | |
Analog Devices Inc./Maxim Integrated
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Independent | 2.5A, 3A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.85V, 3.25V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 8ns, 5ns | 8-MSOP-EP | 4.5V ~ 13.5V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2.5A, 3A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 1.85V, 3.25V | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 8ns, 5ns | 8-MSOP-EP | 7.2V ~ 13.5V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 15ns | 8-SO | 4.5V ~ 11V | |
Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 60 V | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 15V | |
Renesas
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 10ns, 10ns | 8-SOIC | 4.5V ~ 16V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 33ns, 27ns | 16-SOIC | 4V ~ 6V | |
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 33ns, 27ns | 16-SOIC | 4V ~ 6V | |
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 33ns, 27ns | 16-SOIC | 4V ~ 6V | |
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Power Integrations
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 85°C (TA) | 33ns, 27ns | 16-SOIC | 4V ~ 6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 3 | 0°C ~ 70°C (TA) | - | 8-SO | 1.8V ~ 6V | |
Microchip Technology
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Independent | 1.2A, 1.2A | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.4V | Surface Mount | 4 | 0°C ~ 70°C (TA) | 14ns, 13ns | 16-SOIC | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 4A, 4A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.1V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 32ns, 26ns | 8-SOIC-EP | 4V ~ 15V | |
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 85°C (TA) | 33ns, 27ns | 8-PDIP | 4V ~ 6V | |
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Microchip Technology
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Single | 1.5A, 1.5A | High-Side or Low-Side | N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 2.4V | Through Hole | 1 | -40°C ~ 85°C (TA) | 33ns, 27ns | 8-PDIP | 4V ~ 6V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 135 V | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 130ns, 60ns | 14-SO | 10V ~ 15V | |
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Renesas
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Independent | 3A, 4A | Half-Bridge | N-Channel MOSFET | 114 V | Non-Inverting | 3.7V, 7.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 9ns, 7.5ns | 8-SOIC | 8V ~ 14V | |
Renesas
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Synchronous | 3.5A, 3.5A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 14.5ns, 15ns | 8-SOIC | 4.5V ~ 16.5V | |
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Renesas
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Single | 3.5A, 3.5A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 14.5ns, 15ns | 8-SOIC | 4.5V ~ 16.5V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -40°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 125°C (TJ) | 130ns, 60ns | 16-SO | 10V ~ 15V | |
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Renesas
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Renesas
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Infineon Technologies
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Through Hole | 3 | 0°C ~ 70°C (TA) | - | 8-PDIP | 1.8V ~ 6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | 0°C ~ 70°C (TA) | - | 8-SO | 4.5V ~ 18V | |
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Renesas
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 31ns, 18ns | 12-TDFN (3x3) | 6V ~ 13.2V | |
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STMicroelectronics
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Synchronous | - | Low-Side | N-Channel, P-Channel MOSFET | - | Inverting, Non-Inverting | 1V, 2V | Surface Mount | 8 | -40°C ~ 125°C (TA) | 9ns, 9ns | PowerSO-36, Bottom Pad | 5.2V ~ 20V | |
Texas Instruments
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Independent | 4A, 6A | Half-Bridge | IGBT, N-Channel, P-Channel MOSFET | - | CMOS/TTL | 1.2V, 1.6V | Surface Mount | 2 | -40°C ~ 130°C (TJ) | 6ns, 7ns | 14-SOIC | 3V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 130ns, 60ns | 14-SO | 10V ~ 15V | |
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Renesas
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Analog Devices Inc./Maxim Integrated
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Synchronous | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 15ns, 15ns | 8-SO | 4.5V ~ 11V | |
Analog Devices Inc./Maxim Integrated
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Single | 50mA, 50mA | High-Side | N-Channel MOSFET | - | Non-Inverting | - | Surface Mount | 1 | -40°C ~ 125°C (TJ) | - | 10-MSOP | 3V ~ 42V | |
Infineon Technologies
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3-Phase | 200mA, 350mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.5V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 125ns, 50ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
IXYS
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Single | 30A, 30A | Low-Side | IGBT, N-Channel, P-Channel MOSFET | - | Inverting | 0.8V, 3.5V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 11ns, 11ns | TO-263-5 | 9V ~ 35V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 125°C (TJ) | 130ns, 60ns | 16-SO | 10V ~ 15V | |
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Renesas
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Renesas
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Synchronous | - | Half-Bridge | N-Channel MOSFET | 36 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 85°C (TA) | 31ns, 18ns | 12-TDFN (3x3) | 6V ~ 13.2V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 3A, 3A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 50ns, 40ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Renesas
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Renesas
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 175 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 175 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 175 V | Non-Inverting | - | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 125 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC | 8V ~ 12.6V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Half-Bridge | N-Channel MOSFET | 175 V | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 65ns, 65ns | 8-SOIC-EP | 8V ~ 12.6V | |
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Powerex Inc.
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Single | 3A, 3A | Low-Side | IGBT | - | Non-Inverting | - | Through Hole | 1 | -20°C ~ 70°C (TA) | 300ns, 300ns | Module | 14V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 2A, 2A | Low-Side | N-Channel, P-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Through Hole | 2 | -40°C ~ 85°C (TA) | 25ns, 20ns | 8-PDIP | 4.5V ~ 18V | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 85°C (TA) | - | 8-SO | 9V ~ 24V | |
Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Through Hole | 2 | -40°C ~ 125°C (TJ) | 130ns, 60ns | 14-PDIP | 10V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 500mA, 500mA | Half-Bridge | N-Channel MOSFET | 56 V | Inverting, Non-Inverting | 0.8V, 2V | Surface Mount | 2 | -40°C ~ 150°C (TJ) | 130ns, 120ns | 16-SO | 5V ~ 30V | |
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Renesas
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Renesas
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Renesas
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Renesas
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Synchronous | 10A, 10A | High-Side or Low-Side | IGBT | - | Non-Inverting | 1.65V, 3.85V | Surface Mount | 2 | -40°C ~ 125°C (TA) | - | 48-SSOP | - | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Through Hole | 2 | -40°C ~ 85°C (TA) | - | 8-PDIP | 9V ~ 24V | |
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Analog Devices Inc./Maxim Integrated
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Single | 1.1A, 1.1A | High-Side | N-Channel MOSFET | 80 V | Non-Inverting | 1.2V, 1.6V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 10ns, 7ns | 8-MSOP-EP | 4V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Surface Mount | 4 | 0°C ~ 125°C (TJ) | 130ns, 60ns | 24-SOIC | 10V ~ 15V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | -40°C ~ 150°C (TJ) | 80ns, 35ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
Analog Devices Inc./Maxim Integrated
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Single | 6A, 6A | Low-Side | N-Channel MOSFET | - | Non-Inverting | 1.8V, 2V | Surface Mount | 1 | -55°C ~ 125°C (TJ) | 13ns, 8ns | 10-MSOP-EP | 5V ~ 25V | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 4 | -40°C ~ 85°C (TA) | 1.7µs, 2.5µs | 18-SOIC | 4.5V ~ 16.5V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 60 V | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 90ns, 40ns | 10-MSOP-EP | 3.5V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Surface Mount | 4 | 0°C ~ 70°C (TA) | - | 16-SO | 4.5V ~ 18V | |
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Renesas
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Single | 12A, 12A | High-Side or Low-Side | IGBT | - | Non-Inverting | 0.8V, 2.4V | Surface Mount | 1 | -40°C ~ 125°C (TJ) | 12ns, 12.2ns | 8-SOIC | 4.5V ~ 12V | |
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Analog Devices Inc./Maxim Integrated
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Independent | 1.5A, 1.5A | Half-Bridge | N-Channel MOSFET | 60 V | Non-Inverting | 0.8V, 2V | Surface Mount | 4 | -40°C ~ 125°C (TJ) | 130ns, 60ns | 24-SOIC | 10V ~ 15V | |
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Powerex Inc.
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- | - | - | - | - | - | - | Through Hole | - | - | - | - | - | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 135 V | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 90ns, 40ns | 10-MSOP-EP | 3.5V ~ 15V | |
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Analog Devices Inc./Maxim Integrated
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Synchronous | 2A, 2A | Low-Side | N-Channel MOSFET | - | Inverting, Non-Inverting | - | Surface Mount | 2 | -55°C ~ 150°C (TJ) | 15ns, 15ns | 8-SO | 4.5V ~ 11V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 60 V | Non-Inverting | - | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 15V | |
Analog Devices Inc./Maxim Integrated
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Independent | - | High-Side | N-Channel MOSFET | - | Non-Inverting | 0.8V, 2V | Through Hole | 4 | 0°C ~ 70°C (TA) | - | 16-PDIP | 4.5V ~ 18V | |
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Infineon Technologies
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3-Phase | 250mA, 500mA | Half-Bridge | IGBT, N-Channel MOSFET | 600 V | Inverting | 0.8V, 2.2V | Surface Mount | 6 | 125°C (TJ) | 90ns, 40ns | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | |
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Analog Devices Inc./Maxim Integrated
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Single | - | High-Side | N-Channel MOSFET | 135 V | Non-Inverting | 1.8V, 1.7V | Surface Mount | 1 | -55°C ~ 150°C (TJ) | 90ns, 40ns | 16-MSOP-EP | 3.5V ~ 135V | |
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Power Integrations
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Single | 35A, 35A | High-Side or Low-Side | IGBT | 4500 V | - | - | Chassis Mount | 1 | -40°C ~ 85°C | 9ns, 30ns | Module | 23.5V ~ 26.5V | |
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Power Integrations
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Single | 35A, 35A | High-Side or Low-Side | IGBT | 6500 V | - | - | Chassis Mount | 1 | -40°C ~ 85°C | 9ns, 30ns | Module | 23.5V ~ 26.5V | |
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Power Integrations
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Single | 35A, 35A | High-Side or Low-Side | IGBT | 6500 V | - | - | Chassis Mount | 1 | -40°C ~ 85°C | 9ns, 30ns | Module | 23.5V ~ 26.5V | |
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Power Integrations
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Single | 35A, 35A | High-Side or Low-Side | IGBT | 6500 V | - | - | Chassis Mount | 1 | -40°C ~ 85°C | 9ns, 30ns | Module | 23.5V ~ 26.5V | |
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Power Integrations
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Single | 35A, 35A | High-Side or Low-Side | IGBT | 6500 V | - | - | Chassis Mount | 1 | -40°C ~ 85°C | 9ns, 30ns | Module | 23.5V ~ 26.5V | |
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Power Integrations
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Power Integrations
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Power Integrations
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Single | 35A, 35A | High-Side or Low-Side | IGBT | - | - | - | Chassis Mount | 1 | -40°C ~ 85°C (TA) | 9ns, 30ns | Module | 14.5V ~ 15.5V |
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