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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCP5104PG from ON Semiconductor is a single-input, high voltage gate driver suitable for driving N-channel power MOSFETs or IGBTs in a half-bridge configuration. It utilizes a bootstrap technique for proper high-side power switch drive.
Key electrical specifications include a high voltage range up to 600V, dV/dt immunity of ±50 V/nsec, and a gate drive supply range from 10V to 20V. The device offers high and low drive outputs with current capabilities of 250mA source and 500mA sink. It is compatible with 3.3V and 5V input logic and features matched propagation delays between channels.
This gate driver is housed in an 8-pin PDIP package and is designed for through-hole mounting. The operating temperature range is -40°C to 125°C (TJ). Typical applications include half-bridge power converters.
The NCV prefix variant is AEC-Q100 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10 V to 20 V.
The NCP5104PG is available in an 8-PDIP (0.300", 7.62mm) through-hole package.
The operating junction temperature range is -40°C to 125°C.
The typical output source current is 250 mA and typical output sink current is 500 mA.
The dV/dt immunity is ±50 V/nsec.
The NCP5104PG has two driver channels.
The driver can drive IGBTs and N-Channel MOSFETs.