| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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370 pcs
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370 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The NCP5304DR2G from On Semiconductor is a high voltage power gate driver. It is designed to drive two N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration, utilizing a bootstrap technique for proper high-side power switch drive.
Key electrical features include a high voltage range of up to 600V, dV/dt immunity of ±50 V/nsec, and a gate drive supply range from 10V to 20V. The device offers high and low drive outputs with a current capability of 250 mA source and 500 mA sink. It is compatible with 3.3V and 5V input logic and features cross-conduction protection with a 100 ns internal fixed dead time.
This gate driver operates within a temperature range of -40°C to 125°C (TJ). It is housed in an 8-SOIC package with surface mount mounting type. The NCP5304DR2G is suitable for typical applications such as half-bridge and full-bridge power converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The high voltage range is up to 600 V.
The gate drive supply range is from 10 V to 20 V.
The output current capability is 250 mA for source and 500 mA for sink.
The operating temperature range is -40°C to 125°C (TJ).
It is in an 8-SOIC package with surface mount capability.
The internal fixed dead time is 100 ns.