| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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593 pcs
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593 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The IXYS IXDF602SI is a high-performance dual low-side gate driver IC. It is designed to drive IGBTs, N-Channel, and P-Channel MOSFETs with independent channels. This device supports a wide operating voltage range from 4.5V to 35V, with logic voltage options of 0.8V and 3V.
Key electrical characteristics include a current capability of 2A per channel and fast rise times of 7.5ns and 6.5ns. The input type can be inverting or non-inverting, offering design flexibility. The operating temperature range is -55°C to 150°C (TJ).
Packaged in an 8-SOIC-EP (Exposed Pad) surface-mount configuration, the IXDF602SI is suitable for various power management applications. Its robust design and specifications make it a reliable choice for demanding electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4.5V to 35V.
8-SOIC-EP (8-pin SOIC with exposed pad).
-55°C to 150°C (junction).
2 independent channels.
2A.
IGBT, N-Channel MOSFET, and P-Channel MOSFET.
7.5ns and 6.5ns for the two channels.