| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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325 pcs
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325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The IR2125S from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It is designed for high-side driving configurations and offers robust protection circuitry, including over-current limiting.
Key electrical specifications include a high-side floating offset voltage capability of up to 500V and a gate drive supply range of 12V to 18V. The device supports output currents of 1.6A and 3.3A, with typical turn-on and turn-off times of 150ns. Logic inputs are compatible with standard CMOS or LSTTL outputs down to 2.5V logic.
This gate driver IC is housed in a 16-SOIC package, suitable for surface mount applications. It operates within a junction temperature range of -40°C to 150°C. The IR2125S is designed to limit the current in the driven power transistor and provides an error lead to indicate fault conditions.
Features such as dV/dt immunity and undervoltage lockout contribute to its reliability in demanding power applications. The output is in phase with the input, simplifying circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum offset voltage is 500V.
The output current is 1A sink and 2A source.
The operating junction temperature range is -40°C to 150°C.
The IR2125S is available in a 16-SOIC package.
The typical turn-on and turn-off propagation delay is 150ns.
The IR2125S can drive IGBTs and N-Channel MOSFETs.