| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,340 pcs
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1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2111STRPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It is specifically designed for half-bridge applications, featuring dependent high and low side referenced output channels.
This driver operates with a gate drive supply range of 10V to 20V and can handle high side voltages up to 600V. Key electrical characteristics include output currents of 250mA source and 500mA sink, with typical propagation delays of 750ns (turn-on) and 150ns (turn-off). It also features internally set deadtime of 650ns to prevent shoot-through.
The device utilizes proprietary HVIC and latch-immune CMOS technologies for robust monolithic construction. Logic inputs are compatible with standard CMOS outputs. The output drivers are designed with a high pulse current buffer stage to minimize driver cross-conduction.
Packaged in an 8-SOIC surface mount package, the IR2111STRPBF is suitable for applications requiring efficient power switching. It operates across a wide temperature range of -40°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The high-side floating supply offset voltage is rated for 600V maximum.
The operating junction temperature range is -40°C to 150°C.
The IR2111STRPBF is available in an 8-SOIC surface mount package.
The gate drive supply range is 10V to 20V for both channels.
The output current is 200mA source and 420mA sink typical.
Typical turn-on delay is 750ns and turn-off delay is 150ns.
The typical deadtime is 650ns.