| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,378 pcs
|
1378 pcs | On Request | 1 | On Request | On Request | 1323+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Input Type | |
| Lead Spacing | |
| Lead Style | |
| Load Capacitance | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Propagation Delay | |
| Rise | |
| Supplier Device Package | |
| Voltage |
The NCP5901BDR2G by ON Semiconductor is a high-performance dual MOSFET gate driver optimized for synchronous buck converter applications. It is designed to drive both high-side and low-side power MOSFETs efficiently.
Key electrical specifications include a voltage range of 4.5V to 13.2V, with a high-side voltage capability of up to 35V. The driver supports synchronous operation and N-Channel MOSFETs, featuring adaptive anti-cross-conduction circuitry to minimize switching losses. It offers fast transition times and a propagation delay of 25 ns, enabling high-efficiency solutions for notebook and desktop systems.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, the NCP5901BDR2G operates within a temperature range of 0°C to 150°C (TJ). Its design includes an integrated bootstrap diode and an output disable control for comprehensive power management.
This gate driver is suitable for power solutions in desktop systems and can directly interface with compatible PWM controllers like the NCP6151.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 4.5V to 13.2V.
The operating temperature range is 0°C to 150°C (junction).
It is available in an 8-SOIC package (0.154", 3.90mm Width) for surface mount.
The propagation delay is 25 ns.
Yes, it has an integrated bootstrap diode.
It is a dual MOSFET gate driver for half-bridge configuration.
Yes, it includes under-voltage lockout protection.