| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,081 pcs
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1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments UCC21222DR is a dual-channel isolated gate driver designed for driving GaNFET, IGBT, and MOSFET power switches. It provides basic isolation with a withstand voltage of 3000 Vrms and working isolation voltage of 990 Vrms.
This device features independent channels, supporting half-bridge configurations. It delivers peak output currents of up to 6A (sink) and 4A (source). The input supply voltage range is from 3V to 5.5V, with output VCC/VDD ranging from 9.2V to 18V. Key electrical specifications include a propagation delay of 0.028 µs, rise time of 5ns, and fall time of 6ns. It operates within an ambient temperature range of -40°C to 125°C.
The UCC21222DR is available in a 16-SOIC package and is designed for surface mount applications. Its features include disable functionality and programmable dead time, making it suitable for various power management applications requiring robust gate driving with isolation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.15 | $1.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -40°C to +125°C.
The UCC21222DR is available in a 16-SOIC surface-mount package.
The peak output current is 6 A sink and 4 A source.
The withstand isolation voltage is 3000 Vrms, working isolation voltage is 990 Vrms, and transient isolation voltage is 4242 VPK.
The UCC21222DR supports GaNFET, IGBT, and MOSFET power switches.
The propagation delay time is 28 ns.
Yes, the UCC21222DR features programmable dead time.