| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,300 pcs
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1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas HIP6601BCB is a high-frequency, dual MOSFET driver specifically designed to drive two power N-Channel MOSFETs in a synchronous rectified buck converter topology. This device is suitable for core voltage supplies for advanced microprocessors and high-frequency, low-profile DC/DC converters.
Key electrical characteristics include a high-side voltage of 15V, a supply voltage range of 10.8V to 13.2V, and a typical rise time of 20ns. The driver supports high switching frequencies up to 2MHz, with a propagation delay of 30ns. It features adaptive shoot-through protection and an internal bootstrap device.
The HIP6601BCB is available in an 8-SOIC package and is designed for surface mount applications. It operates within a temperature range of 0°C to 125°C (TJ). This component is RoHS3 compliant and has an MSL rating of 1.
This driver is often used in conjunction with HIP63xx or ISL65xx series PWM controllers to form a complete core-voltage regulator solution.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HIP6601BCB operates from 10.8 V to 13.2 V.
The HIP6601BCB is available in an 8-SOIC surface-mount package.
The HIP6601BCB operates from 0°C to 125°C junction temperature.
The typical rise time is 20 ns.
The typical propagation delay is 30 ns.