| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,333 pcs
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2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2112SPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, enabling flexible control in power switching applications. This device is fully operational to 600V and provides a gate drive supply range from 10V to 20V, with logic compatibility down to 3.3V.
Key electrical specifications include a high side voltage capability of 600V, an operating voltage range of 10V to 20V, and logic voltage support from 6V to 9.5V. It can handle output currents of 250mA and 500mA, with rise times as fast as 40ns. The driver supports both high-side and low-side configurations and is suitable for driving N-channel MOSFETs and IGBTs.
Packaged in a 16-SOIC (0.295", 7.50mm Width) surface mount package, the IR2112SPBF operates within an ambient temperature range of -40°C to 150°C (TJ). Its design incorporates features like undervoltage lockout for both channels and matched propagation delays, simplifying use in high-frequency applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.09 | $4.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 10V to 20V.
The operating temperature range is -40°C to 150°C (junction temperature).
It comes in a 16-SOIC (0.295", 7.50mm Width) surface mount package.
The maximum high-side voltage is 600V.
It has two independent driver channels.
It can drive IGBTs and N-Channel MOSFETs.