| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas ISL6612AECBZ is an integrated circuit designed as a gate driver for N-Channel MOSFETs. This device features two independent drivers capable of operating in a half-bridge configuration.
Key electrical specifications include a supply voltage range of 10.8V to 13.2V, with a high-side voltage capability of 36V. The output current is rated at 1.25A and 2A, with rise and fall times of 26ns and 18ns respectively. The device operates within a junction temperature range of 0°C to 125°C.
Packaged in an 8-SOIC (Exposed Pad) format, the ISL6612AECBZ is designed for surface mounting. Its compact dimensions and robust specifications make it suitable for various power management applications requiring efficient switching control.
This gate driver is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10.8V to 13.2V.
8-SOIC (surface mount).
0°C to 125°C.
1.25A and 2A per driver.
2 drivers.
2MHz.
Silicon (Si).