| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The IR2103S from Infineon Technologies is a high-voltage, high-speed gate driver IC. It is specifically designed for driving N-channel MOSFETs or IGBTs in a half-bridge configuration, operating up to 600 volts.
Key electrical specifications include a gate drive supply range of 10V to 20V and logic compatibility down to 3.3V. The device offers independent high-side and low-side referenced output channels, with a high-side voltage rating of 600V. Typical output currents are 130mA for the high side and 270mA for the low side, with typical rise and fall times of 100ns and 50ns respectively. A typical dead time of 520ns is also incorporated.
This gate driver IC is housed in an 8-SOIC surface-mount package, measuring 0.154" (3.90mm) in width. It is suitable for applications requiring efficient and reliable control of power switching devices in a half-bridge topology. The operating temperature range is from -40°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
10V to 20V.
8-SOIC (0.154", 3.90mm Width) surface mount.
-40°C to 150°C junction temperature.
High side: 130mA sink / 210mA source. Low side: 270mA sink / 360mA source.
520ns.