| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,400 pcs
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2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2301STRPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, enabling bootstrap operation and full functionality up to 600V. The device is tolerant to negative transient voltage and is dV/dt immune.
Designed for robust performance, the IR2301STRPBF operates with a gate drive supply range of 5 to 20V and is compatible with 3.3V, 5V, and 15V logic inputs. It offers matched propagation delays for both channels and includes undervoltage lockout for both channels. The output drivers are built with a high pulse current buffer stage to minimize driver cross-conduction.
This gate driver IC is housed in an 8-SOIC package, suitable for surface mount applications. It supports both high-side and low-side driven configurations and is designed to drive N-channel power MOSFETs or IGBTs. The operating temperature range is -40°C to 150°C (TJ).
Key electrical characteristics include a high side voltage of 600V, a gate drive supply voltage of 5V to 20V, and logic voltage compatibility down to 3.3V. It provides independent channels for flexible control and features non-inverting input types.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.55 | $1.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The high side voltage rating is 600V.
The operating temperature range is -40°C to 150°C (TJ).
The IR2301STRPBF is supplied in an 8-SOIC package.
The IR2301STRPBF is compatible with 0.8V and 2.9V logic voltages.
The gate drive supply voltage range is 5V to 20V.