| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,484 pcs
|
2484 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Type | |
| High Side Voltage | |
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| Logic Voltage | |
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The NCP5109BDR2G from ON Semiconductor is a high voltage gate driver IC capable of driving N-channel MOSFETs or IGBTs in a half-bridge configuration. It utilizes bootstrap techniques for proper high-side power switch drive and operates with independent logic inputs.
Key electrical specifications include a high voltage range up to 200V, dV/dt immunity of ±50 V/nsec, and a gate drive supply range from 10V to 20V. The device offers output source/sink current capability of 250mA/500mA and is compatible with 3.3V and 5V logic inputs. It features matched propagation delays between channels and includes cross-conduction protection with a 100ns internal fixed dead time for version B.
This gate driver is suitable for various power converter applications, including half-bridge and full-bridge converters. It is available in an 8-SOIC package and supports surface mount installation. The operating temperature range is -40°C to 125°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10 V to 20 V.
200 V.
8-SOIC (0.154", 3.90mm Width).
-40°C to 125°C (TJ).
250 mA source, 500 mA sink.
±50 V/nsec.
100 ns (Version B).