ROHM Semiconductor

<p>The 2SA1514KT146S is a PNP bipolar junction transistor designed for high-voltage amplifier applications. Manufactured by ROHM Semiconductor, this transistor offers a maximum collector-emitter breakdown voltage of -120V and a maximum collector current of -50mA, making it suitable for circuits requiring high voltage handling in a small signal transistor.</p><p>&nbsp;</p><p>Key electrical characteristics include a DC current gain (hFE) range of 180 to 560 at VCE=-6V and IC=-2mA, a typical transition frequency of 140 MHz, and a maximum collector-emitter saturation voltage of -500mV at IC/IB=-10mA/-1mA. The device is housed in a surface-mount SMT3 package, which is also known as SC-59 and SOT-346, and is supplied in tape and reel packaging with a standard quantity of 3000 pieces.</p><p>&nbsp;</p><p>This transistor is the complementary part to NPN types such as the 2SC4102, 2SC3906K, and 2SC2389S, allowing for use in push-pull amplifier stages. It is designed for general-purpose amplification and switching in applications where high voltage capability is required.</p>

<p>The 2SC4617EBHZGTLQ is an NPN bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications. The transistor features a maximum collector-emitter voltage (Vceo) of 50V and a collector current (Ic) rating of 150mA, with a power dissipation of 150mW.</p><p>&nbsp;</p><p>Electrical characteristics include a DC current gain (hFE) of 120 minimum at Ic=1mA and Vce=6V, and a maximum Vce saturation voltage of 400mV at Ib=5mA and Ic=500mA. The transition frequency (ft) is 180MHz, making it suitable for high-frequency applications up to VHF/UHF ranges.</p><p>&nbsp;</p><p>The device is housed in a compact SC-89 (SOT-490) surface-mount package, also known as EMT3F (SOT-416FL). It supports a junction temperature up to 150°C. The transistor is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited), though these compliance claims are unverified.</p><p>&nbsp;</p><p>Typical applications include switching circuits, signal amplification, and driver stages in consumer electronics, communication devices, and industrial control systems. The small footprint allows for high-density PCB designs.</p>

<p>The 2SD1866TV2 is an NPN Darlington transistor from ROHM Semiconductor, designed for medium power switching applications such as motor and relay drive. It features a built-in zener diode between collector and base, a built-in resistor between base and emitter, and a built-in damper diode, providing strong protection against reverse surges from inductive loads.</p><p>&nbsp;</p><p>Key electrical specifications include a collector-base voltage of 60V (typical), collector-emitter breakdown voltage of 50V (minimum), and a collector current rating of 2A DC (3A pulse). The DC current gain (hFE) is a minimum of 1000 at 1A collector current and 2V collector-emitter voltage, with a typical range of 1000 to 10000. The collector-emitter saturation voltage is a maximum of 1.5V at 1A collector current and 1mA base current.</p><p>&nbsp;</p><p>The transistor has a transition frequency of 80 MHz (typical) and an output capacitance of 25 pF (typical). It can dissipate up to 1W when mounted on a 40x40x0.7mm ceramic board. The junction temperature rating is 150°C, and the storage temperature range is -55°C to +150°C.</p><p>&nbsp;</p><p>The 2SD1866TV2 is available in a 3-SIP through-hole package (ROHM ATV package) with a taping specification of TV2. The basic ordering unit is 2500 pieces. This component is suitable for applications requiring high current gain and robust surge protection in inductive load switching.</p>