| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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178 pcs
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178 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1188 from ROHM Semiconductor is a PNP bipolar junction transistor (BJT) housed in a SOT-89 package. This component is designed to complement the 2SD1766 and offers a low VCE(sat).
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of -32V and a continuous Collector Current (IC) of -2A. The DC current gain (hFE) ranges from 82 to 390 under typical test conditions (VCE=-3V, IC=-0.5A). The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of -0.8V at IC=-2A and IB=-0.2A, indicating efficient switching performance.
With a maximum power dissipation of 500mW and a junction temperature up to 150℃, the 2SB1188 is suitable for moderate power applications. The operating temperature range is from -55℃ to 150℃.
The SOT-89 package is a surface-mount type, commonly used in applications where space is a constraint. Its dimensions are approximately 4.4mm x 2.6mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SB1188 is -32V.
The continuous collector current (IC) for the 2SB1188 is -2A.
The 2SB1188 transistor is supplied in a SOT-89 package.
The DC current gain (hFE) for the 2SB1188 ranges from 82 to 390 when tested at VCE=-3V and IC=-0.5A.
The collector-emitter saturation voltage (VCE(sat)) for the 2SB1188 is a maximum of -0.8V when tested at IC=-2A and IB=-0.2A.