| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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175 pcs
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175 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Technology |
This ROHM Semiconductor RSS080N05FU6TB is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage of 60V and can handle a continuous drain current of 8A.
The MOSFET utilizes Metal Oxide technology and is suitable for surface mount applications, housed in an 8-SOP package. Its specifications make it a versatile component for power management and switching circuits.
Key electrical characteristics include its N-channel configuration and a 60V breakdown voltage. The component is designed for reliable operation within specified parameters, making it a solid choice for engineers designing power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the RSS080N05FU6TB is 60V.
The RSS080N05FU6TB MOSFET has a current rating of 8A.
The RSS080N05FU6TB is an N-Channel MOSFET.
The RSS080N05FU6TB MOSFET is supplied in an 8-SOP package.
The RSS080N05FU6TB is designed for surface mounting.