| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
151 pcs
|
151 pcs | On Request | 1 | On Request | On Request | 9924P/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature |
The ROHM Semiconductor 2SB1132 is an epitaxial planar type PNP silicon transistor. It offers a low collector-emitter saturation voltage (VCE(sat)) of -0.2V typical at IC/IB = -500mA/-50mA. The transistor has a collector-emitter breakdown voltage (BVCEO) of -32V and a continuous collector current (IC) rating of -1A.
Key electrical characteristics include a minimum DC current transfer ratio (hFE) of 120 and a transition frequency (fT) of 150MHz minimum at VCE = -5V and IE = 50mA. The output capacitance (Cob) is a maximum of 20pF at VCB = -10V and IE = 0A.
Absolute maximum ratings include a collector-emitter voltage of -32V and a continuous collector current of -1A. Power dissipation varies depending on the mounting conditions, with ratings of 0.5W on a ceramic board, 1W on a PCB with sufficient copper plating, and 2W for single pulse conditions.
The 2SB1132 is supplied in the MPT3 package, suitable for surface mounting. It is a complimentary part to the 2SD1664 and 2SD1858.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (BVCEO) is -32V.
The 2SB1132 is available in the MPT3 surface mount package.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.
The DC current gain ranges from 120 to 390 at VCE=-3V and IC=-0.1A.
The continuous collector current is -1A, with pulsed capability up to -2A.
The transition frequency (fT) is at least 150MHz at VCE=-5V, IE=50mA.
The typical saturation voltage is -0.2V at IC/IB=-500mA/-50mA.