| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
164 pcs
|
164 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RF4E075ATTCR is a P-Channel MOSFET designed for various electronic applications. It offers a maximum drain-source voltage (Vdss) of 30V and can handle a continuous current of 7.5A at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 21.7mOhm at 7.5A and 10V gate-source voltage. The input capacitance (Ciss) is 1000pF at 15V, and the gate charge (Qg) is 22nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. The device operates within a temperature range of -150°C to 150°C (TJ).
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology. It is housed in an 8-PowerUDFN package and designed for surface mounting. The maximum power dissipation is rated at 2W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the RF4E075ATTCR is 30 V.
The maximum continuous current for the RF4E075ATTCR is 7.5A.
The Rds On is a maximum of 21.7mOhm at 7.5A and 10V.
The operating temperature range is 150°C (TJ).
The RF4E075ATTCR is in an 8-PowerUDFN package.
The RF4E075ATTCR is a surface mount device.