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R6011ENX The ROHM Semiconductor R6011ENX is an N-Channel Power MOSFET with a 600V drain-source voltage and 11A continuous drain current. It is supplied in a TO-220FM package.
Mfr Part #:

R6011ENX

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor R6011ENX is an N-Channel Power MOSFET with a 600V drain-source voltage and 11A continuous drain current. It is supplied in a TO-220FM package.
✓ Total Stock: 180 pcs
$ Price Range: $2.27

R6011ENX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
180 pcs
On Request
180 pcs On Request 1 On Request On Request 16+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

R6011ENX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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R6011ENX Description

Short technical summary and product information.

The ROHM Semiconductor R6011ENX is an N-Channel Power MOSFET designed for switching applications. It features a maximum drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 11A at 25°C case temperature. The on-state resistance (RDS(on)) is a maximum of 390mOhm at 3.8A and 10V gate-source voltage.

 

This MOSFET offers fast switching characteristics and ease of parallel use. The maximum power dissipation is 53W at 25°C case temperature, with a junction temperature range of -55°C to +150°C. The component is housed in a TO-220FM package suitable for through-hole mounting.

 

Key electrical parameters include a gate threshold voltage (VGS(th)) between 2V and 4V, and an input capacitance (Ciss) of 670pF. The device also specifies avalanche current and energy ratings for robust operation.

R6011ENX Quick Information

Product Type: MOSFET
Canonical Name: ROHM Semiconductor R6011ENX N-Channel Power MOSFET
Subcategory: Power MOSFET

R6011ENX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

R6011ENX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

R6011ENX Features

  • 600V drain-source voltage rating.
  • 11A continuous drain current capability.
  • Low on-state resistance of 390mOhm.
  • TO-220FM package for through-hole mounting.
  • Fast switching and easy parallel use.

R6011ENX Applications

  • Suitable for power switching circuits.
  • Ideal for general purpose applications.
  • Used in power supply designs.
  • Applicable in motor control circuits.

R6011ENX FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the R6011ENX?

The maximum drain-source voltage (VDSS) for the R6011ENX is 600V.

What is the continuous drain current of the R6011ENX?

The continuous drain current (ID) for the R6011ENX is 11A at 25°C case temperature.

What is the maximum on-state resistance (RDS(on)) for the R6011ENX?

The maximum on-state resistance (RDS(on)) for the R6011ENX is 390mOhm at 3.8A drain current and 10V gate-source voltage.

What package type is the R6011ENX supplied in?

The R6011ENX is supplied in a TO-220FM package.

What is the operating temperature range for the R6011ENX?

The operating junction and storage temperature range for the R6011ENX is -55°C to +150°C.

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