R6020ANZC8 The ROHM Semiconductor R6020ANZC8 is an N-Channel MOSFET designed for high voltage applications. It offers a 600V drain-source voltage and a 20A current rating.
Mfr Part #:

R6020ANZC8

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor R6020ANZC8 is an N-Channel MOSFET designed for high voltage applications. It offers a 600V drain-source voltage and a 20A current rating.
✓ Total Stock: 190 pcs
$ Price Range: $2.27

R6020ANZC8 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
190 pcs
190 pcs On Request 1 On Request On Request 12+ On Request On Request

R6020ANZC8 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

R6020ANZC8 Description

Short technical summary and product information.

The ROHM Semiconductor R6020ANZC8 is a high-voltage N-Channel MOSFET. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 20A at ambient temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 220mOhm at 10A and 10V, a gate charge (Qg) of 65nC at 10V, and an input capacitance (Ciss) of 2040pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 4.15V at 1mA, with a maximum gate-source voltage (Vgs) of ±30V. The device has a maximum power dissipation of 120W (Tc).

 

This MOSFET is housed in a TO-3PF package and is designed for through-hole mounting. It operates at a maximum junction temperature of 150°C.

 

The R6020ANZC8 utilizes MOSFET (Metal Oxide) technology, making it suitable for various power switching applications where high voltage and moderate current handling are required.

R6020ANZC8 Quick Information

Product Type: MOSFET
Canonical Name: ROHM Semiconductor R6020ANZC8 N-Channel MOSFET
Subcategory: Single

R6020ANZC8 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

R6020ANZC8 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

R6020ANZC8 Features

  • 600V drain-source voltage rating.
  • 20A continuous drain current.
  • 220mOhm maximum on-resistance.
  • 65nC maximum gate charge.
  • TO-3PF through-hole package.

R6020ANZC8 Applications

  • Suitable for high-voltage power switching applications.
  • Used in motor control and inverter circuits.
  • Ideal for industrial power supply designs.
  • Applicable in automotive power management systems.

R6020ANZC8 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the R6020ANZC8?

The maximum drain-source voltage (Vdss) for the R6020ANZC8 is 600 V.

What is the continuous current rating of the R6020ANZC8?

The R6020ANZC8 has a continuous current rating of 20A at ambient temperature.

What is the maximum on-resistance of the R6020ANZC8?

The maximum on-resistance (Rds On) for the R6020ANZC8 is 220mOhm when tested at 10A drain current and 10V gate-source voltage.

What is the package type for the R6020ANZC8?

The R6020ANZC8 is supplied in a TO-3PF package.

What is the operating temperature range for the R6020ANZC8?

The operating temperature for the R6020ANZC8 is up to 150°C (TJ).

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