| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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153 pcs
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153 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Technology |
The ROHM Semiconductor SP8M51TB1 is a versatile N and P-Channel MOSFET designed for various electronic applications. It features a high drain-to-source voltage rating of 100V, with continuous current capabilities of 3A for one channel and 2.5A for the other.
This MOSFET operates at a maximum junction temperature of 150°C and has a power dissipation of 2W. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
The component is housed in an 8-SOIC package with a width of 0.154 inches (3.90mm) and is designed for surface mounting. The 8-SOP supplier device package is standard for this type of component.
Compliance information indicates RoHS3 compliance and MSL 1 Unlimited moisture sensitivity level. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
3A for N-channel and 2.5A for P-channel.
2W.
150°C.
8-SOIC (0.154", 3.90mm Width) surface mount package.
Surface mount.
N and P-Channel.