Central Semiconductor Corp

<p>The Central Semiconductor CMSD6001S TR PBFREE is a dual series ultra low leakage silicon switching diode designed for high-reliability switching applications. It features a 1 pair series connection configuration with a continuous reverse voltage rating of 75V and a peak repetitive reverse voltage of 100V. The diode supports a continuous forward current of 250mA and can handle peak forward surge currents up to 4.0A for 1.0µs pulses.</p><p>&nbsp;</p><p>Electrical characteristics include a typical forward voltage of 0.85V at 1mA, 0.95V at 10mA, and 1.1V at 100mA. Reverse leakage current is typically 500pA at 75V, and reverse recovery time is 3µs. Junction capacitance is typically 2.0pF at 0V and 1MHz. The device is halogen free by design and operates over a temperature range of -65°C to +150°C.</p><p>&nbsp;</p><p>The diode is supplied in a surface mount SOT-323 (SC-70) package with a thermal resistance of 455°C/W junction-to-ambient. It is suitable for switching circuits requiring extremely low leakage current and is RoHS3 compliant and REACH unaffected.</p>

<p>The Central Semiconductor CMPD6263C is a dual common cathode Schottky diode designed for low current surface mount fast switching applications requiring a low forward voltage drop.</p><p>&nbsp;</p><p>Key electrical specifications include a peak repetitive reverse voltage of 70V, continuous forward current of 15mA, and a typical forward voltage of 395mV at 1mA. Reverse leakage current is typically 10nA at 50V, with a maximum of 200nA. Junction capacitance is 2.0pF typical at zero bias.</p><p>&nbsp;</p><p>The device is housed in a SOT-23 surface mount package and is rated for operation from -65°C to 150°C junction temperature. Maximum power dissipation is 350mW with a thermal resistance of 357°C/W junction to ambient.</p>