| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,867 pcs
|
2867 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor CMUD2836 is an ultra-high speed silicon switching diode. It is manufactured using the epitaxial planar process and housed in an epoxy molded ULTRAmini™ surface mount package, specifically the SOT-523 case.
This dual diode configuration offers a peak repetitive reverse voltage of 75V and an average forward current of 200mA per diode. Key electrical characteristics include a maximum forward voltage of 1.2V at 100mA, a reverse leakage current of 100nA at 50V, and a fast reverse recovery time of 4ns.
The CMUD2836 is suitable for high-speed switching applications. Its operating and storage junction temperature range is -65 to +150°C. The component has a power dissipation of 250mW and a thermal resistance of 500°C/W.
Available in common anode (CMUD2836) and common cathode (CMUD2838) configurations, this diode is designed for surface mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage for the CMUD2836 is 75 V.
The average forward current for the CMUD2836 is 200 mA.
The maximum forward voltage at 100mA for the CMUD2836 is 1.2 V.
The reverse recovery time for the CMUD2836 is 4.0 ns.
The operating and storage junction temperature range for the CMUD2836 is -65 to +150 °C.
The CMUD2836 is available in the SOT-523 surface mount package.