| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFW16A is an NPN bipolar junction RF transistor manufactured by Central Semiconductor Corp. Designed for RF amplification and switching applications, it offers a maximum collector-emitter voltage of 25V and a continuous collector current rating of 150mA. The device dissipates up to 1.5W and provides a typical transition frequency (fT) of 1.2GHz, making it suitable for high-frequency circuits up to the VHF/UHF range.
The transistor is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting, ensuring robust mechanical and thermal performance. The DC current gain (hFE) is a minimum of 25 at 50mA collector current and 5V VCE, providing consistent amplification characteristics.
This part is commonly used in RF driver stages, oscillator circuits, and low-power RF amplifiers where moderate gain and frequency response are required. The metal can package offers good heat dissipation and shielding for sensitive RF designs.
The maximum collector-emitter voltage (VCEO) is 25V.
The maximum collector current (IC) is 150mA.
The maximum power dissipation is 1.5W.
The typical transition frequency (fT) is 1.2GHz.
The BFW16A is available in a TO-205AD / TO-39-3 metal can package (TO-39 supplier device package) for through-hole mounting.
The BFW16A is listed as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.