SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5582 is an NPN silicon annular hermetic transistor from Central Semiconductor Corp, suitable for applications as medium-speed switches and amplifiers from audio to VHF frequencies.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage of 40 Vdc, a Collector-Base Breakdown Voltage of 75 Vdc, and an Emitter-Base Breakdown Voltage of 6.0 Vdc. It offers a continuous collector current of up to 800 mA.
The device has a high current-gain-bandwidth product (fT) of 250 MHz minimum at 20 mAdc. It is housed in a TO-46 package, designed for through-hole mounting.
This transistor is a complement to PNP transistors in the 2N2904 series. It is specified for DC current gain from 1.0 to 500 mAdc and features a low collector-emitter saturation voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage of the 2N5582 is 40V.
The 2N5582 is packaged in a TO-46 case.
The maximum collector current is 800 mA.
The collector-base breakdown voltage is 75V.
The minimum DC current gain (hFE) is 40 at IC = 10mA.
