| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,100 pcs
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3100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The CMST2907A TR from Central Semiconductor Corp is a PNP Bipolar Junction Transistor (BJT) designed for various electronic applications. This component operates with a maximum Collector-Emitter Voltage (VCEO) of 60V and a maximum Collector-Base Voltage (VCBO) of 60V. It can handle a maximum DC Collector Current (IC) of 600mA and has an Emitter-Base Voltage (VEBO) rating of 5V.
The transistor has a power dissipation (Pd) of 275mW and a gain bandwidth product (fT) of 200MHz. Its Collector-Emitter Saturation Voltage is typically 400mV. The device is constructed using Silicon (Si) technology.
Packaged in a compact SOT-323 surface-mount (SMD/SMT) case, the CMST2907A TR is suitable for applications where space is a constraint. The packaging is available in Cut Tape, MouseReel, and Reel formats. It operates within a temperature range of -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the CMST2907A TR is 60V.
The maximum DC Collector Current (IC) for the CMST2907A TR is 600mA.
The CMST2907A TR is supplied in a SOT-323 package.
The CMST2907A TR operates between -65°C and +150°C.
The gain bandwidth product (fT) of the CMST2907A TR is 200MHz.