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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MMBT2907A
MMBT2907A
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - PNP 400mV @ 15mA, 150mA 60 V
MMST2222A
MMST2222A
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBT4401Q
MMBT4401Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBT3904Q
MMBT3904Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBT3906Q
MMBT3906Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBT2222A
MMBT2222A
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Anbon Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C 350 mW - - SOT-23 - NPN 1V @ 50mA, 500mA 40 V
MMST5551
MMST5551
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 200 mA 80 @ 10mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C 200 mW - - SOT-323 - NPN 200mV @ 5mA, 50mA 160 V
PMMT591A
PMMT591A
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMST5401
MMST5401
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 200 mA 60 @ 10mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C 200 mW - - SOT-323 - PNP 500mV @ 5mA, 50mA 150 V
MMBT3906T
MMBT3906T
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C 150 mW - - SOT-523 - PNP 400mV @ 5mA, 50mA 40 V
MMST2907A
MMST2907A
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C 200 mW - - SOT-323 - PNP 1.6V @ 50mA, 500mA 60 V
MMST4401
MMST4401
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C 200 mW - - SOT-323 - NPN 400mV @ 15mA, 150mA 40 V
2SC2812-6-M-TB-E
2SC2812-6-M-TB-E
On Semiconductor
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MMBT2222AQ
MMBT2222AQ
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBT4403
MMBT4403
Anbon Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3L - PNP 750mV @ 50mA, 500mA 40 V
MMBT4401
MMBT4401
Anbon Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3L - NPN 750mV @ 50mA, 500mA 40 V
MMBT2907A
MMBT2907A
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Anbon Semiconductor
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3L - PNP 1.6V @ 50mA, 500mA 60 V
MMBT5551
MMBT5551
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Anbon Semiconductor
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3L - NPN 200mV @ 5mA, 50mA 160 V
MMBTA06
MMBTA06
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Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 250mV @ 10mA, 100mA 80 V
MMBT5551Q
MMBT5551Q
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MMSTA92
MMSTA92
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 100 mA 40 @ 10mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 400mV @ 2mA, 20mA 300 V
MMBTA14
MMBTA14
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 300 mA 20000 @ 150mA, 1V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MMBT2907AQ
MMBT2907AQ
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMST3906Q
MMST3906Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBTA55
MMBTA55
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Surface Mount -55°C ~ 150°C 225 mW - - SOT-23 - PNP 250mV @ 10mA, 100mA 60 V
MMSTA42
MMSTA42
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 200 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C 200 mW - - SOT-323 - NPN 500mV @ 2mA, 20mA 300 V
MMBTA56
MMBTA56
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 50MHz - - Surface Mount -55°C ~ 150°C 225 mW - - SOT-23 - PNP 250mV @ 10mA, 100mA 80 V
MMSTA56
MMSTA56
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBTA05
MMBTA05
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Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 250mV @ 10mA, 100mA 60 V
MMSTA06
MMSTA06
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMSTA55
MMSTA55
Yangzhou Yangjie Electronic Technology Co.,Ltd
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2SD734F-AA
2SD734F-AA
On Semiconductor
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 - - - - - - - - 700 mA 160 @ 50mA, 2V - - - 250MHz - - Through Hole 150°C (TJ) 600 mW - - 3-NP - NPN 300mV @ 50mA, 500mA 20 V
MMDT3906Q
MMDT3906Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMDT3946Q
MMDT3946Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBTA56Q
MMBTA56Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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MMBT2222A
MMBT2222A
HY Electronic Corp
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 300 mW - - SOT-23 - NPN 1V @ 50mA, 500mA 40 V
2SA1836-T1-A
2SA1836-T1-A
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Renesas
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 - - - - - - - - 100 mA 90 @ 1mA, 6V - - - 180MHz - - Surface Mount 150°C (TJ) 200 mW - - SC-75 - PNP 300mV @ 10mA, 100mA 50 V
BCP56-16
BCP56-16
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Anbon Semiconductor
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - - - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - NPN 500mV @ 50mA, 500mA 80 V
2SD734F
2SD734F
On Semiconductor
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 - - - - - - - - 700 mA 160 @ 50mA, 2V - - - 250MHz - - Through Hole 150°C (TJ) 600 mW - - 3-NP - NPN 300mV @ 50mA, 500mA 20 V
2SC4919-S-TL-E
2SC4919-S-TL-E
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On Semiconductor
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2SC1214D
2SC1214D
Renesas
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2SC2619FCTL-E
2SC2619FCTL-E
Renesas
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BC850C_R1_00001
BC850C_R1_00001
PANJIT
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23 - NPN 600mV @ 5mA, 100mA 45 V
2SC2462LDTR-E
2SC2462LDTR-E
Renesas
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SS8550-H
SS8550-H
Yangzhou Yangjie Electronic Technology Co.,Ltd
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 - - - - - - - - 1.5 A 120 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - PNP 500mV @ 80mA, 800mA 25 V
2SC4487S-AN
2SC4487S-AN
On Semiconductor
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 - - - - - - - - 300 mA 140 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - NPN 500mV @ 100mA, 2A 50 V
2SC6043-AE
2SC6043-AE
On Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 420MHz - - Through Hole 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 300mV @ 50mA, 1A 50 V
MMBTA05_R1_00001
MMBTA05_R1_00001
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PANJIT
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23 - NPN 250mV @ 10mA, 100mA 60 V
MMBT4403W_R1_00001
MMBT4403W_R1_00001
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PANJIT
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 750mV @ 50mA, 500mA 40 V
BC858A_R1_00001
BC858A_R1_00001
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PANJIT
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 200MHz - - Surface Mount -50°C ~ 150°C (TJ) 330 mW - - SOT-23 - PNP 650mV @ 5mA, 100mA 30 V
Showing 17801-17850 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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